Optical properties of gan grown on si(111) substrates by mocvd
文献类型：期刊论文
| 作者 | Zhang, BS; Wang, JF; Wang, Y; Zhu, JJ; Yang, H |
| 刊名 | International journal of modern physics b
 |
| 出版日期 | 2005-07-10 |
| 卷号 | 19期号:15-17页码:2610-2615 |
| 关键词 | Gan Mocvd Optical properties Pl spectrum |
| ISSN号 | 0217-9792 |
| 通讯作者 | Zhang, bs(baoshunzhang@126.com) |
| 英文摘要 | Gan epilayers were grown on si (111) substrates by mocvd. the optical properties of the samples under different growth conditions were characterized the abnormal peaks of excitonic emissions related to cubic-gan were observed on the samples under improper growth conditions based on the lt pl measurements. also the peak intensity is much higher than that of hexagonal-gan. the higher intensity of exciton peaks is attributed to the local quantum well formed between the hexagonal- and cubic-gan. no exciton peaks of cubic-gan were found on the sample using the optimal growth conditions. |
| WOS关键词 | WURTZITE GAN ; HETEROSTRUCTURES ; LUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical |
| 语种 | 英语 |
| WOS记录号 | WOS:000231237000051 |
| 出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426296 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, BS |
| 作者单位 | 1.Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, BS,Wang, JF,Wang, Y,et al. Optical properties of gan grown on si(111) substrates by mocvd[J]. International journal of modern physics b,2005,19(15-17):2610-2615. |
| APA | Zhang, BS,Wang, JF,Wang, Y,Zhu, JJ,&Yang, H.(2005).Optical properties of gan grown on si(111) substrates by mocvd.International journal of modern physics b,19(15-17),2610-2615. |
| MLA | Zhang, BS,et al."Optical properties of gan grown on si(111) substrates by mocvd".International journal of modern physics b 19.15-17(2005):2610-2615. |
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来源：半导体研究所
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