Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-mu m-thick n-type gaas layer
文献类型：期刊论文
| 作者 | Zhou, X; Zheng, HZ; Li, GR; Hu, B; Gan, HD; Zhu, H |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2005-08-01 |
| 卷号 | 28期号:3页码:242-246 |
| 关键词 | Photoinduced Voltage shift Resonant tunneling structure |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2005.03.002 |
| 通讯作者 | Zhou, x(zxia@red.semi.ac.cn) |
| 英文摘要 | By integrating a three-barrier, two-well resonant tunneling structure with a 1.2-mu m-thick, slightly doped n-gaas layer, a photoinduced voltage shift on the order of magnitude of 100 mv in resonant current peaks has been verified at an irradiance of low light power density. the 1.2-mu m-thick, slightly doped n-gaas layer manifests itself of playing an important role in enhancing photoelectric sensitivity. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | CIRCUITS ; DIODES |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000230627400007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426302 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, X |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, X,Zheng, HZ,Li, GR,et al. Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-mu m-thick n-type gaas layer[J]. Physica e-low-dimensional systems & nanostructures,2005,28(3):242-246. |
| APA | Zhou, X,Zheng, HZ,Li, GR,Hu, B,Gan, HD,&Zhu, H.(2005).Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-mu m-thick n-type gaas layer.Physica e-low-dimensional systems & nanostructures,28(3),242-246. |
| MLA | Zhou, X,et al."Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-mu m-thick n-type gaas layer".Physica e-low-dimensional systems & nanostructures 28.3(2005):242-246. |
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来源：半导体研究所
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