Qe and suns-v-oc study on the epitaxial csitf solar cells
文献类型：期刊论文
| 作者 | Bin, A; Shen, H; Ban, Q; Liang, ZC; Chen, RL; Shi, ZR; Liao, XB |
| 刊名 | Science in china series e-engineering & materials science
 |
| 出版日期 | 2005-02-01 |
| 卷号 | 48期号:1页码:41-52 |
| 关键词 | Ssp ribbon Crystalline silicon thin film solar cells Quantum efficiency Dark characteristics |
| ISSN号 | 1006-9321 |
| DOI | 10.1360/04ye0201 |
| 通讯作者 | Bin, a(aibin@ms.giec.ac.cn) |
| 英文摘要 | In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (csitf) solar cells on the ssp (silicon sheets from powder) ribbons, qe (quantum efficiency) and suns-v-oc study were performed on the epitaxial csitf solar cells fabricated on the ssp ribbons, the ssp ribbons after surface being zone melting recrystallized (zmr) and single crystalline silicon (sc-si) substrates. the results show that the epi-layers deposited on the ssp ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the ssp ribbons possess poor crystallographic quality, so the heavy grain boundary (gb) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared csitf solar cells suffer the worse spectra response at long-wavelength range. nearly all the dark characteristic parameters of the csitf solar cells are far away from the ideal values. the performances of the csitf solar cells are especially affected by too high i-02 (the dark saturation current of space charge region) values and too low r-sh (parallel resistance) values. the higher 102 values are mainly caused by the heavy gb recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower r-sh values are attributed to the electrical leakage at the un-passivated pn junction or solar cell edges after the solar cells are cut by the laser scriber. |
| WOS关键词 | POLYCRYSTALLINE SILICON FILMS ; CRYSTALLINE SILICON ; SSP |
| WOS研究方向 | Engineering ; Materials Science |
| WOS类目 | Engineering, Multidisciplinary ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000228223500004 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426308 |
| 专题 | 半导体研究所 |
| 通讯作者 | Bin, A |
| 作者单位 | 1.SUN YAT SEN Univ, Energy Engn Acad, Inst Solar Energy Syst, Guangzhou 510275, Peoples R China 2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Guangzhou 510640, Peoples R China 3.Suntech Power Co Ltd, Wuxi 214028, Peoples R China 4.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bin, A,Shen, H,Ban, Q,et al. Qe and suns-v-oc study on the epitaxial csitf solar cells[J]. Science in china series e-engineering & materials science,2005,48(1):41-52. |
| APA | Bin, A.,Shen, H.,Ban, Q.,Liang, ZC.,Chen, RL.,...&Liao, XB.(2005).Qe and suns-v-oc study on the epitaxial csitf solar cells.Science in china series e-engineering & materials science,48(1),41-52. |
| MLA | Bin, A,et al."Qe and suns-v-oc study on the epitaxial csitf solar cells".Science in china series e-engineering & materials science 48.1(2005):41-52. |
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来源：半导体研究所
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