Photoluminescence study of (gaas1-xsbx/inyga1-yas)/gaas bilayer quantum well grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, W; He, ZH; Han, Q; Wu, RH; Jiang, DS |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2005-06-01 |
| 卷号 | 54期号:6页码:2950-2954 |
| 关键词 | Molecular beam epitaxy Bilayer quantum well Type-ii luminescence |
| ISSN号 | 1000-3290 |
| 通讯作者 | Niu, zc() |
| 英文摘要 | Photoluminescence study of (gaas1-xsbx/inyga1-yas)/gaas bilayer quantum wells (bqws) grown by molecular beam epitaxy (mbe) were carried out. temperature and excitation power dependent photoluminescence (pl) study indicated that the band alignment of the bqws is type - ii. the origin of the double-peak luminescence was discussed. under optimized growth conditions, the pl emission wavelength from the bqws has been extend up to 1.31 mu m with a single peak at room temperature. |
| WOS关键词 | ROOM-TEMPERATURE ; SINGLE ; OPERATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000229684700087 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426320 |
| 专题 | 半导体研究所 |
| 通讯作者 | Niu, ZC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, XH,Niu, ZC,Ni, HQ,et al. Photoluminescence study of (gaas1-xsbx/inyga1-yas)/gaas bilayer quantum well grown by molecular beam epitaxy[J]. Acta physica sinica,2005,54(6):2950-2954. |
| APA | Xu, XH.,Niu, ZC.,Ni, HQ.,Xu, YQ.,Zhang, W.,...&Jiang, DS.(2005).Photoluminescence study of (gaas1-xsbx/inyga1-yas)/gaas bilayer quantum well grown by molecular beam epitaxy.Acta physica sinica,54(6),2950-2954. |
| MLA | Xu, XH,et al."Photoluminescence study of (gaas1-xsbx/inyga1-yas)/gaas bilayer quantum well grown by molecular beam epitaxy".Acta physica sinica 54.6(2005):2950-2954. |
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来源：半导体研究所
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