Low-temperature growth of inn by mocvd and its characterization
文献类型：期刊论文
| 作者 | Huang, Y; Wang, H; Sun, Q; Chen, J; Li, DY; Wang, YT; Yang, H |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-03-15 |
| 卷号 | 276期号:1-2页码:13-18 |
| 关键词 | Growth rate In situ reflectometry Metalorganic chemical vapor deposition Inn |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.10.152 |
| 通讯作者 | Huang, y(yhuang@red.semi.ac.cn) |
| 英文摘要 | Metalorganic chemical vapor deposition growth of inn on sapphire substrate has been investigated between 400 degrees c and 500 degrees c to seek the growth condition of inn buffer layer, i.e. the first step of realization of the two-step growth method. ex situ characterization of the epilayers by means of atomic force microscope, scanning electron microscope and x-ray diffraction, coupled with in situ reflectance curves, has revealed different growth circumstances at these temperatures, and conclusion has been reached that the most suitable temperature for buffer growth is around 450 degrees c. in addition, the growth rate of inn at the optimized temperature with regard to different precursor flow rates is studied at length. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; VAPOR-PHASE EPITAXY ; INDIUM NITRIDE ; ELECTRON-TRANSPORT ; MOVPE INN ; BAND-GAP ; FILM ; ENERGY ; BUFFER ; LAYER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000228218300003 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426328 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang, Y |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Y,Wang, H,Sun, Q,et al. Low-temperature growth of inn by mocvd and its characterization[J]. Journal of crystal growth,2005,276(1-2):13-18. |
| APA | Huang, Y.,Wang, H.,Sun, Q.,Chen, J.,Li, DY.,...&Yang, H.(2005).Low-temperature growth of inn by mocvd and its characterization.Journal of crystal growth,276(1-2),13-18. |
| MLA | Huang, Y,et al."Low-temperature growth of inn by mocvd and its characterization".Journal of crystal growth 276.1-2(2005):13-18. |
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来源：半导体研究所
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