Thermal oxidation behaviors of gan powders
文献类型：期刊论文
| 作者 | Xiao, HD; Ma, HL; Xue, CS; Zhuang, HZ; Ma, J; Zong, FJ; Hu, WR |
| 刊名 | Materials letters
 |
| 出版日期 | 2005-12-01 |
| 卷号 | 59期号:29-30页码:4041-4043 |
| 关键词 | Thermal oxidation behaviors Thermal annealing Gan Ga2o3 |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2005.07.061 |
| 通讯作者 | Xiao, hd(hdxiao@sdu.edu.cn) |
| 英文摘要 | The thermal techniques including thermal gravimetric analysis (tga) and differential thermal analysis (dta) were employed to investigate the thermal oxidation behaviors of gallium nitride (gan) in the environment of open air. it was found that the thermal oxidation behaviors of gan powders followed the two-step reaction being exothermic. formation of ga-o islands on the surface of gan was found in the temperature range between 200 and 680 degrees c by ftir and xrd patterns. the gallium oxide (ga2o3) was gradually formed in the interior of gan when the thermal temperature exceeded 810 degrees c. over 915 degrees c, gan was all converted into beta-ga2o3 observed by ftir and xrd patterns. (c) 2005 elsevier b.v. all rights reserved. |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000232864800056 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426331 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xiao, HD |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 3.Shandong Univ, Res Ctr Environm Sci & Engn Technol, Jinan 250061, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, HD,Ma, HL,Xue, CS,et al. Thermal oxidation behaviors of gan powders[J]. Materials letters,2005,59(29-30):4041-4043. |
| APA | Xiao, HD.,Ma, HL.,Xue, CS.,Zhuang, HZ.,Ma, J.,...&Hu, WR.(2005).Thermal oxidation behaviors of gan powders.Materials letters,59(29-30),4041-4043. |
| MLA | Xiao, HD,et al."Thermal oxidation behaviors of gan powders".Materials letters 59.29-30(2005):4041-4043. |
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来源：半导体研究所
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