Realization of gaas/algaas quantum-cascade lasers with high average optical power
文献类型：期刊论文
| 作者 | Liu, JQ; Liu, FQ; Lu, XZ; Guo, Y; Wang, ZG |
| 刊名 | Solid-state electronics
 |
| 出版日期 | 2005-12-01 |
| 卷号 | 49期号:12页码:1961-1964 |
| 关键词 | X-ray diffraction Molecular beam epitaxy Semiconducting gallium compounds Quantum-cascade lasers (qcls) |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.sse.2005.09.005 |
| 通讯作者 | Liu, fq() |
| 英文摘要 | Quasi-continuous-wave operation of gaas/algaas quantum-cascade lasers with high average optical power is demonstrated. double x-ray diffraction has been used to investigate the quality of the epitaxial material. the compositional gradients and the interface quality are controlled effectively. the corrected average power of per facet about 17 mw and temperature tuning coefficient of the gain peak about 0.91 nm/k from 83 k to 140 k is achieved in pulse operation. best value of threshold current density is less than 3.0 ka/cm(2) at 83 k. (c) 2005 elsevier ltd. all rights reserved. |
| WOS关键词 | UNIPOLAR SEMICONDUCTOR-LASERS ; MU-M ; OPERATION |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000234233800015 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426334 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, FQ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JQ,Liu, FQ,Lu, XZ,et al. Realization of gaas/algaas quantum-cascade lasers with high average optical power[J]. Solid-state electronics,2005,49(12):1961-1964. |
| APA | Liu, JQ,Liu, FQ,Lu, XZ,Guo, Y,&Wang, ZG.(2005).Realization of gaas/algaas quantum-cascade lasers with high average optical power.Solid-state electronics,49(12),1961-1964. |
| MLA | Liu, JQ,et al."Realization of gaas/algaas quantum-cascade lasers with high average optical power".Solid-state electronics 49.12(2005):1961-1964. |
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来源：半导体研究所
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