In-situ resistivity measurement of zns in diamond anvil cell under high pressure
文献类型：期刊论文
| 作者 | Han, YH; Luo, JF; Hao, AM; Gao, CX; Xie, HS; Qu, SC; Liu, HW; Zou, GT |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2005-04-01 |
| 卷号 | 22期号:4页码:927-930 |
| ISSN号 | 0256-307X |
| 通讯作者 | Gao, cx() |
| 英文摘要 | An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (dac) for resistivity measurement under high pressure. the resistivity of nanocrystal zns is measured under high pressure up to 36.4 gpa by using designed dac. the reversibility and hysteresis of the phase transition are observed. the experimental data is confirmed by an electric current field analysis accurately. the method used here can also be used under both ultrahigh pressure and high temperature conditions. |
| WOS关键词 | SUPERCONDUCTIVITY ; METALLIZATION ; COMPRESSION ; TRANSITIONS ; SCATTERING ; SIZE ; GPA |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000228350900041 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426338 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, CX |
| 作者单位 | 1.Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China 2.Chinese Acad Sci, Inst Geochem, Guiyang 550002, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, YH,Luo, JF,Hao, AM,et al. In-situ resistivity measurement of zns in diamond anvil cell under high pressure[J]. Chinese physics letters,2005,22(4):927-930. |
| APA | Han, YH.,Luo, JF.,Hao, AM.,Gao, CX.,Xie, HS.,...&Zou, GT.(2005).In-situ resistivity measurement of zns in diamond anvil cell under high pressure.Chinese physics letters,22(4),927-930. |
| MLA | Han, YH,et al."In-situ resistivity measurement of zns in diamond anvil cell under high pressure".Chinese physics letters 22.4(2005):927-930. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。