Structural characterization of zn3n2 nanowires prepared by nitridation technique
文献类型：期刊论文
| 作者 | Zong, FJ; Ma, HL; Ma, J; Xue, CS; Zhang, XJ; Xiao, HD; Ji, F; Zhuang, HZ |
| 刊名 | Materials letters
 |
| 出版日期 | 2005-09-01 |
| 卷号 | 59期号:21页码:2643-2646 |
| 关键词 | Nitridation method Zn3n2 Nanowires Structural characterization |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2005.04.009 |
| 通讯作者 | Zong, fj(fjzong@sdu.edu.cn) |
| 英文摘要 | This paper reports that zn3n2 nanowires of high quality can be synthesized by the nitridation reaction of zn powders with a flowing nh3 gas in 500 ml/min at the nitridation temperature of 600 degrees c for 120 min. surveys by using x-ray diffraction (xrd) indicate that zn3n2 nanowires has a cubic structure with lattice constants a = 9.788 angstrom. observations by using scanning electron microscopy (sem), transmission electron microscopy (tem) and high-resolution transmission electron microscopy (hrtem) show that zn3n2 is of nanowire structure. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | SCALE GAN NANOWIRES ; THIN-FILMS ; PHYSICAL EVAPORATION ; OPTICAL-PROPERTIES ; GROWTH ; CARBON |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000230338900008 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426341 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zong, FJ |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zong, FJ,Ma, HL,Ma, J,et al. Structural characterization of zn3n2 nanowires prepared by nitridation technique[J]. Materials letters,2005,59(21):2643-2646. |
| APA | Zong, FJ.,Ma, HL.,Ma, J.,Xue, CS.,Zhang, XJ.,...&Zhuang, HZ.(2005).Structural characterization of zn3n2 nanowires prepared by nitridation technique.Materials letters,59(21),2643-2646. |
| MLA | Zong, FJ,et al."Structural characterization of zn3n2 nanowires prepared by nitridation technique".Materials letters 59.21(2005):2643-2646. |
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来源：半导体研究所
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