Experiments and their analysis for self-assembly growth of gan quantum dots via mocvd
文献类型：期刊论文
| 作者 | Meng, T; Zhu, XF; Wang, ZG |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2005-12-01 |
| 卷号 | 34期号:12页码:1849-1853 |
| 关键词 | Gan based quantum dots Self-assembly S-k mode Mocvd |
| ISSN号 | 1002-185X |
| 通讯作者 | Meng, t(mtao@sina.com) |
| 英文摘要 | In recent years, growth of gan-based materials-related quantum dots has become a hot topic in semiconductor materials research. considerable efforts have been devoted to growth of self-assembled quantum dots of gan-based materials via mocvd (metal organic chemical vapor deposition) and there are a lot of relevant literatures. there is, however, few review papers for the topic. in this paper, different experimental methods for fabrication of quantum dots of gan-based materials via mocvd are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; STRANSKI-KRASTANOV GROWTH ; OPTICAL-PROPERTIES ; ALGAN SURFACES |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000234459800001 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426343 |
| 专题 | 半导体研究所 |
| 通讯作者 | Meng, T |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Lab Low Dimens Nanostruct, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Meng, T,Zhu, XF,Wang, ZG. Experiments and their analysis for self-assembly growth of gan quantum dots via mocvd[J]. Rare metal materials and engineering,2005,34(12):1849-1853. |
| APA | Meng, T,Zhu, XF,&Wang, ZG.(2005).Experiments and their analysis for self-assembly growth of gan quantum dots via mocvd.Rare metal materials and engineering,34(12),1849-1853. |
| MLA | Meng, T,et al."Experiments and their analysis for self-assembly growth of gan quantum dots via mocvd".Rare metal materials and engineering 34.12(2005):1849-1853. |
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来源：半导体研究所
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