Recombination kinetics of te isoelectronic centers in znste
文献类型：期刊论文
| 作者 | Yang, XD; Xu, ZY; Sun, Z; Sun, BQ; Li, GH; Sou, IK; Ge, WK |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2005-01-31 |
| 卷号 | 86期号:5页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1861128 |
| 通讯作者 | Yang, xd(zyxu@red.semi.ac.cn) |
| 英文摘要 | The recombination kinetics of te isoelectronic centers in zns1-xtex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (trpl) at low temperature. the measured radiative recombination lifetimes of different te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. as the bound exciton state evolves from a single te impurity (te-1) to larger te clusters (te-n, n=2,3,4), the recombination lifetime increases. it reaches maximum (similar to40 ns) for the te-4 bound states at x=0.155. the increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. in the large te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with te composition. it is mainly due to the hybridization between the te localized states and the host valence band states. the composition dependences of the exciton binding energy and the photoluminescence (pl) line width show the similar tendency that further support the localization picture obtained from the trpl measurement. (c) 2005 american institute of physics. |
| WOS关键词 | ZINC-SULFIDE ; ALLOYS ; LIFETIMES ; PRESSURE ; NITROGEN ; EXCITONS ; STATES ; GAASN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000227144700029 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426347 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, XD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, XD,Xu, ZY,Sun, Z,et al. Recombination kinetics of te isoelectronic centers in znste[J]. Applied physics letters,2005,86(5):3. |
| APA | Yang, XD.,Xu, ZY.,Sun, Z.,Sun, BQ.,Li, GH.,...&Ge, WK.(2005).Recombination kinetics of te isoelectronic centers in znste.Applied physics letters,86(5),3. |
| MLA | Yang, XD,et al."Recombination kinetics of te isoelectronic centers in znste".Applied physics letters 86.5(2005):3. |
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来源：半导体研究所
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