Lateral phase separation in algan grown on gan with a high-temperature ain interlayer
文献类型：期刊论文
| 作者 | Sun, Q; Huang, Y; Wang, H; Chen, J; Jin, RQ; Zhang, SM; Yang, H; Jiang, DS; Jahn, U; Ploog, KH |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2005-09-19 |
| 卷号 | 87期号:12页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2056588 |
| 通讯作者 | Sun, q(qsun@red.semi.ac.cn) |
| 英文摘要 | The influences of a high-temperature (ht) aln interlayer (il) on the phase separation in crack-free algan grown on gan have been studied. the depth-dependent cathodoluminescence (cl) spectra indicate a relatively uniform al distribution in the growth direction, but the monochromatic cl images and the cl spectra obtained by line scan measurements reveal a lateral phase separation in algan grown on relatively thick ht-aln ils. moreover, when increasing the thickness of ht-aln il, the domain-like distribution of the aln mole fraction in algan layers is significantly enhanced through a great reduction of the domain size. the morphology of mesa-like small islands separated by v trenches in the ht-aln il, and the grain template formed by the coalescence of these islands during the subsequent algan lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the algan layer. (c) 2005 american institute of physics. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; THIN ALN INTERLAYER ; STRESS ; HETEROSTRUCTURES ; MORPHOLOGY ; EVOLUTION ; FILM |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000231907200030 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426372 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, Q |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China 3.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany |
| 推荐引用方式 GB/T 7714 | Sun, Q,Huang, Y,Wang, H,et al. Lateral phase separation in algan grown on gan with a high-temperature ain interlayer[J]. Applied physics letters,2005,87(12):3. |
| APA | Sun, Q.,Huang, Y.,Wang, H.,Chen, J.,Jin, RQ.,...&Ploog, KH.(2005).Lateral phase separation in algan grown on gan with a high-temperature ain interlayer.Applied physics letters,87(12),3. |
| MLA | Sun, Q,et al."Lateral phase separation in algan grown on gan with a high-temperature ain interlayer".Applied physics letters 87.12(2005):3. |
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来源：半导体研究所
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