Photoemission study of chemisorption and fermi-level pinning at k/gaas(100) interface with synchrotron radiation
文献类型：期刊论文
| 作者 | Sun, MH; Zhao, TX; Jia, CY; Xu, PS; Lu, ED; Hsu, CC; Ji, H |
| 刊名 | Applied surface science
 |
| 出版日期 | 2005-08-15 |
| 卷号 | 249期号:1-4页码:340-345 |
| 关键词 | X-ray photoelectron spectroscopy Fermi-level pinning Schottky barrier |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2004.12.012 |
| 通讯作者 | Ji, h() |
| 英文摘要 | The adsorption of k on the n-gaas(i 0 0) surface was investigated by x-ray photoelectron spectroscopy (xps) and synchrotron radiation photoemission spectroscopy (sr-pes). the ga3d and as3d core level was measured for clean and k adsorbed gaas(i 0 0) surface. the adsorption of k induced chemical reaction between k and as, and the k-as reactant formed when the k coverage theta > i ml. the chemical reaction between k and ga did not occur, but ga atoms were exchanged by k atoms. from the data of band bending, the schottky barrier is 0.70 ev. the fermi-level pinning was not caused by defect levels. the probable reason is that the dangling bonds of surface ga atoms were filled by the outer-shell electrons of k atoms, forming a half-filled surface state. the fermi-level pinning was caused by this half-filled surface state. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | SENSITIVITY FACTORS ; SURFACES ; GAAS ; NITRIDATION |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000230607800044 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426375 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ji, H |
| 作者单位 | 1.Peking Univ, Sch Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 2.Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China 3.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 4.Acad Sinica, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, MH,Zhao, TX,Jia, CY,et al. Photoemission study of chemisorption and fermi-level pinning at k/gaas(100) interface with synchrotron radiation[J]. Applied surface science,2005,249(1-4):340-345. |
| APA | Sun, MH.,Zhao, TX.,Jia, CY.,Xu, PS.,Lu, ED.,...&Ji, H.(2005).Photoemission study of chemisorption and fermi-level pinning at k/gaas(100) interface with synchrotron radiation.Applied surface science,249(1-4),340-345. |
| MLA | Sun, MH,et al."Photoemission study of chemisorption and fermi-level pinning at k/gaas(100) interface with synchrotron radiation".Applied surface science 249.1-4(2005):340-345. |
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来源：半导体研究所
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