Crack-free gan/si(111) epitaxial layers grown with inalgan alloy as compliant interlayer by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Wu, JJ; Han, XX; Li, JM; Li, DB; Lu, Y; Wei, HY; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-06-01 |
| 卷号 | 279期号:3-4页码:335-340 |
| ISSN号 | 0022-0248 |
| 关键词 | Cracks (111) substrate Stresses Metalorganic chemical vapor deposition Gan Inalgan buffer |
| DOI | 10.1016/j.jcrysgro.2005.02.070 |
| 通讯作者 | Wu, jj(jiejunw@red.semi.ac.cn) |
| 英文摘要 | A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting inalgan interlayers during the growth of gan upon si (1 1 1) substrate. compared with gan film without quaternary interlayer, gan layer grown on inalgan compliant layers shows a five times brighter integrated pl intensity and a (0 0 0 2) high-resolution x-ray diffraction (hrxrd) curve width of 18 arcmin. its chi(min), derived from rutherford backscattering spectrometry (rbs), is about 2.0%, which means that the crystalline quality of this layer is very good. quaternary inalgan layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of gan epitaxy. the mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak in-n bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; SI(111) SUBSTRATE ; PHASE EPITAXY ; BUFFER LAYER ; GAN GROWTH ; ALN ; ULTRAVIOLET ; SILICON ; FILMS ; ALXGA1-XN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000229686200014 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426378 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wu, JJ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, JJ,Han, XX,Li, JM,et al. Crack-free gan/si(111) epitaxial layers grown with inalgan alloy as compliant interlayer by metalorganic chemical vapor deposition[J]. Journal of crystal growth,2005,279(3-4):335-340. |
| APA | Wu, JJ.,Han, XX.,Li, JM.,Li, DB.,Lu, Y.,...&Wang, ZG.(2005).Crack-free gan/si(111) epitaxial layers grown with inalgan alloy as compliant interlayer by metalorganic chemical vapor deposition.Journal of crystal growth,279(3-4),335-340. |
| MLA | Wu, JJ,et al."Crack-free gan/si(111) epitaxial layers grown with inalgan alloy as compliant interlayer by metalorganic chemical vapor deposition".Journal of crystal growth 279.3-4(2005):335-340. |
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来源：半导体研究所
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