Phase-separation suppression in gan-rich side of ganp alloys grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Chen, DJ; Shen, B; Bi, ZX; Zhang, KX; Gu, SL; Zhang, R; Shi, Y; Zheng, YD; Sun, XH; Wan, SK |
| 刊名 | Applied physics a-materials science & processing
 |
| 出版日期 | 2005 |
| 卷号 | 80期号:1页码:141-144 |
| ISSN号 | 0947-8396 |
| DOI | 10.1007/s00339-003-2186-5 |
| 通讯作者 | Shen, b() |
| 英文摘要 | The gan-rich side of ganp ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. x-ray diffraction (xrd) rocking curves show that the ( 0002) peak of ganp shifts to a smaller angle with increasing p content. from the ganp photoluminescence (pl) spectra, the red shifts from the band-edge emission of gan are determined to be 73, 78 and 100 mev, respectively, in the ganp alloys with the p contents of 1.5%, 5.5% and 7.5%. no pl peak or xrd peak related to gap is observed, indicating that phase separation induced by the short-range distribution of gap-rich regions in the ganp layer has been effectively suppressed. the phase-separation suppression in the ganp layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of p atoms in the ganp layer. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; RADICAL CELL ; GAN1-XPX |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000225184300029 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426386 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shen, B |
| 作者单位 | 1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, DJ,Shen, B,Bi, ZX,et al. Phase-separation suppression in gan-rich side of ganp alloys grown by metal-organic chemical vapor deposition[J]. Applied physics a-materials science & processing,2005,80(1):141-144. |
| APA | Chen, DJ.,Shen, B.,Bi, ZX.,Zhang, KX.,Gu, SL.,...&Wang, ZG.(2005).Phase-separation suppression in gan-rich side of ganp alloys grown by metal-organic chemical vapor deposition.Applied physics a-materials science & processing,80(1),141-144. |
| MLA | Chen, DJ,et al."Phase-separation suppression in gan-rich side of ganp alloys grown by metal-organic chemical vapor deposition".Applied physics a-materials science & processing 80.1(2005):141-144. |
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来源：半导体研究所
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