Kinetic study for hopping conduction through deoxyribonucleic acid molecules
文献类型：期刊论文
| 作者 | Yang, YG; Yin, PG; Li, XQ; Yan, YJ |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2005-05-16 |
| 卷号 | 86期号:20页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1931062 |
| 通讯作者 | Yang, yg() |
| 英文摘要 | Recent experiments indicated that disorder effect in deoxyribonucleic acid (dna) may lead to a transition of the electronic hole transport mechanism from band resonant tunneling to thermally activated hopping. in this letter, based on mott's variable-range hopping theory, we present a kinetic study for the hole transport properties of dna molecules. beyond the conventional argument in large-scale systems, our numerical study for finite-size dna molecules reveals a number of unique features for: (i) the current-voltage characteristics, (ii) the temperature and length dependence, and (iii) the transition from conducting to insulating behaviors. (c) 2005 american institute of physics. |
| WOS关键词 | DNA DOUBLE HELIX ; ELECTRICAL-TRANSPORT ; LAMBDA-DNA ; INSULATING BEHAVIOR ; CHARGE-TRANSPORT ; SCALE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000229398000099 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426389 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, YG |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China 3.Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, YG,Yin, PG,Li, XQ,et al. Kinetic study for hopping conduction through deoxyribonucleic acid molecules[J]. Applied physics letters,2005,86(20):3. |
| APA | Yang, YG,Yin, PG,Li, XQ,&Yan, YJ.(2005).Kinetic study for hopping conduction through deoxyribonucleic acid molecules.Applied physics letters,86(20),3. |
| MLA | Yang, YG,et al."Kinetic study for hopping conduction through deoxyribonucleic acid molecules".Applied physics letters 86.20(2005):3. |
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来源：半导体研究所
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