Study of the long-term stability of the effective concentration of ionized space charges (n-eff) of neutron-irradiated silicon detectors fabricated by various thermal-oxidation processes
文献类型：期刊论文
| 作者 | LI, Z; CHEN, W; DOU, L; EREMIN, V; KRANER, HW; LI, CJ; LINDSTROEM, G; SPIRITI, E |
| 刊名 | Ieee transactions on nuclear science
 |
| 出版日期 | 1995-08-01 |
| 卷号 | 42期号:4页码:219-223 |
| ISSN号 | 0018-9499 |
| 通讯作者 | Li, z() |
| 英文摘要 | Experimental study of the reverse annealing of the effective concentration of ionized space charges (n-eff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (rt) and elevated temperature (et). various thermal oxidations with temperatures ranging from 975 degrees c to 1200 degrees c with and without trichlorethane (tca), which result in different concentrations of oxygen and carbon impurities, have been used. it has been found that, the rt annealing of the n-eff is hindered initially (t < 42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t > 42 days after the radiation) n-eff reverse annealing. no apparent effect of oxygen on the stability of n-eff has been observed at rt. at elevated temperature (80 degrees c), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. it is apparent that for the initial stages (first and/or second) of n-eff reverse annealing, there may tie no dependence on the oxygen and carbon concentrations in the ranges studied. |
| WOS关键词 | RADIATION-DAMAGE |
| WOS研究方向 | Engineering ; Nuclear Science & Technology |
| WOS类目 | Engineering, Electrical & Electronic ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:A1995RP81900005 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426394 |
| 专题 | 半导体研究所 |
| 通讯作者 | LI, Z |
| 作者单位 | 1.WAYNE STATE UNIV,DETROIT,MI 48202 2.RUSSIAN ACAD SCI,AF IOFFE PHYSICOTECH INST,ST PETERSBURG 196140,RUSSIA 3.INST SEMICOND,BEIJING,PEOPLES R CHINA 4.UNIV HAMBURG,W-2000 HAMBURG,GERMANY 5.IST NAZL FIS NUCL,SEZ SANITA,I-00161 ROME,ITALY |
| 推荐引用方式 GB/T 7714 | LI, Z,CHEN, W,DOU, L,et al. Study of the long-term stability of the effective concentration of ionized space charges (n-eff) of neutron-irradiated silicon detectors fabricated by various thermal-oxidation processes[J]. Ieee transactions on nuclear science,1995,42(4):219-223. |
| APA | LI, Z.,CHEN, W.,DOU, L.,EREMIN, V.,KRANER, HW.,...&SPIRITI, E.(1995).Study of the long-term stability of the effective concentration of ionized space charges (n-eff) of neutron-irradiated silicon detectors fabricated by various thermal-oxidation processes.Ieee transactions on nuclear science,42(4),219-223. |
| MLA | LI, Z,et al."Study of the long-term stability of the effective concentration of ionized space charges (n-eff) of neutron-irradiated silicon detectors fabricated by various thermal-oxidation processes".Ieee transactions on nuclear science 42.4(1995):219-223. |
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