Characteristics of gan film prepared by ammoniating ga2o3/al2o3 deposited on si(111) substrate
文献类型：期刊论文
| 作者 | Wei, QQ; Xue, CS; Sun, ZC; Zhuang, HZ; Wang, SY |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2005-05-01 |
| 卷号 | 34期号:5页码:746-749 |
| 关键词 | Gan Ga2o3/al2o3 film Ammoniating Magnetron sputtering |
| ISSN号 | 1002-185X |
| 通讯作者 | Wei, qq(wqq0503@yahoo.com.cn) |
| 英文摘要 | Gallium nitride (gan) films have been successfully fabricated on silicon (111) substrates through ammoniating ga2o3/al2o3 films deposited by rf magnetron sputtering. the formed films were characterized by fourier transform infrared (ftir) transmission spectroscopy, x-ray diffraction (xrd) and scanning electron microscopy (sem). the sample with the thickness of the al2o3 of about 15 nm, being ammoniated at 900 degrees c for 15 minutes, has the best crystal quality and surface morphology. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; BUFFER LAYERS ; GROWTH |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000229459600019 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426397 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, QQ |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, QQ,Xue, CS,Sun, ZC,et al. Characteristics of gan film prepared by ammoniating ga2o3/al2o3 deposited on si(111) substrate[J]. Rare metal materials and engineering,2005,34(5):746-749. |
| APA | Wei, QQ,Xue, CS,Sun, ZC,Zhuang, HZ,&Wang, SY.(2005).Characteristics of gan film prepared by ammoniating ga2o3/al2o3 deposited on si(111) substrate.Rare metal materials and engineering,34(5),746-749. |
| MLA | Wei, QQ,et al."Characteristics of gan film prepared by ammoniating ga2o3/al2o3 deposited on si(111) substrate".Rare metal materials and engineering 34.5(2005):746-749. |
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来源：半导体研究所
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