The structural and photoluminescence character of inas quantum dots grown on a combined inalas and gaas strained buffer
文献类型：期刊论文
| 作者 | Shi, GX; Xu, B; Jin, P; Ye, XL; Cui, CX; Zhang, CL; Wu, J; Wang, ZG |
| 刊名 | Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5
 |
| 出版日期 | 2005 |
| 卷号 | 475-479页码:1791-1794 |
| 关键词 | Quantum dots Strain buffer layer Inas Photoluminescence |
| ISSN号 | 0255-5476 |
| 通讯作者 | Shi, gx(gxshi@red.semi.ac.cn) |
| 英文摘要 | The structural and photoluminescence (pl) properties of the inas quantum dots (qds) grown on a combined inalas and gaas strained buffer layer have been investigated by afm and pl measurements. the dependence of the critical thickness for the transition from 2d to 3d on the thickness of gaas layer is demonstrated directly by rheed. the effects of the introduced-inalas layer on the density and the aspect ratio of qds have been discussed. |
| WOS关键词 | WELL ; LASER ; LAYER |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000227494702030 |
| 出版者 | TRANS TECH PUBLICATIONS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426399 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, GX |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, GX,Xu, B,Jin, P,et al. The structural and photoluminescence character of inas quantum dots grown on a combined inalas and gaas strained buffer[J]. Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,2005,475-479:1791-1794. |
| APA | Shi, GX.,Xu, B.,Jin, P.,Ye, XL.,Cui, CX.,...&Wang, ZG.(2005).The structural and photoluminescence character of inas quantum dots grown on a combined inalas and gaas strained buffer.Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,475-479,1791-1794. |
| MLA | Shi, GX,et al."The structural and photoluminescence character of inas quantum dots grown on a combined inalas and gaas strained buffer".Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5 475-479(2005):1791-1794. |
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来源：半导体研究所
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