High electron mobility of modulation doped gaas after growing inp by solid source molecular beam epitaxyd
文献类型：期刊论文
| 作者 | Shu, YC; Pi, B; Lin, YW; Xing, XD; Yao, JH; Wang, ZG; Xu, JJ |
| 刊名 | Transactions of nonferrous metals society of china
 |
| 出版日期 | 2005-04-01 |
| 卷号 | 15期号:2页码:332-335 |
| 关键词 | Modulation doped gaas High electron mobility Quantum hall oscillation |
| ISSN号 | 1003-6326 |
| 通讯作者 | Shu, yc(shuyc@nankai.edu.cn) |
| 英文摘要 | Modulation-doped algaas/gaas structures were grown on gaas(100) substrate by solid source molecular beam epitaxy(ssmbe) system. the factors which influence the electron mobility were investigated. after growing inp based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 k) of more than 1.50 x 10(5) cm(2)/(v (.) s) can still be obtained. the structures and growth conditions have been studied and optimized via hall measurements. for a typical sample, 2.0 k electron mobility as high as 1.78 x 10(6) cm(2)/(v (.) s) is achieved and the quantum hall oscillation phenomena can be observed. |
| WOS关键词 | QUANTUM-WELL LASERS ; HETEROSTRUCTURES ; GAS ; SCATTERING ; DENSITIES |
| WOS研究方向 | Metallurgy & Metallurgical Engineering |
| WOS类目 | Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000228956700027 |
| 出版者 | ALLERTON PRESS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426406 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shu, YC |
| 作者单位 | 1.Nankai Univ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Minist Educ, Tianjin 300457, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shu, YC,Pi, B,Lin, YW,et al. High electron mobility of modulation doped gaas after growing inp by solid source molecular beam epitaxyd[J]. Transactions of nonferrous metals society of china,2005,15(2):332-335. |
| APA | Shu, YC.,Pi, B.,Lin, YW.,Xing, XD.,Yao, JH.,...&Xu, JJ.(2005).High electron mobility of modulation doped gaas after growing inp by solid source molecular beam epitaxyd.Transactions of nonferrous metals society of china,15(2),332-335. |
| MLA | Shu, YC,et al."High electron mobility of modulation doped gaas after growing inp by solid source molecular beam epitaxyd".Transactions of nonferrous metals society of china 15.2(2005):332-335. |
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来源：半导体研究所
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