Photoluminescence properties of c+ implanted epitaxial si annealed in hydrogen ambience
文献类型：期刊论文
| 作者 | Wang, Q; Li, YG; Shi, LW; Xue, CS |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2005-02-01 |
| 卷号 | 34期号:2页码:256-258 |
| 关键词 | C plus implantation Annealing in hydrogen ambience Chemical etching Nanometer silicon with embedded structure |
| ISSN号 | 1002-185X |
| 通讯作者 | Wang, q() |
| 英文摘要 | Blue luminescence at about 43 1 nm is obtained from epitaxial silicon after sequential processing of c+ implantation, annealing in hydrogen ambience and chemical etching. with the increase of chemical etching, the blue peak was enhanced at first, decreased then and substituted by a red peak at last. c=o compounds induced during c+ implantation are embedded in the surface of nanometer si formed during annealing, and nanometer silicon with embedded structure is formed at last, which contributes to the blue emission. |
| WOS关键词 | ER |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000227367700020 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426408 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Q |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Q,Li, YG,Shi, LW,et al. Photoluminescence properties of c+ implanted epitaxial si annealed in hydrogen ambience[J]. Rare metal materials and engineering,2005,34(2):256-258. |
| APA | Wang, Q,Li, YG,Shi, LW,&Xue, CS.(2005).Photoluminescence properties of c+ implanted epitaxial si annealed in hydrogen ambience.Rare metal materials and engineering,34(2),256-258. |
| MLA | Wang, Q,et al."Photoluminescence properties of c+ implanted epitaxial si annealed in hydrogen ambience".Rare metal materials and engineering 34.2(2005):256-258. |
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来源：半导体研究所
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