Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (inyga1-yas/gaas1-x sb-x)/ gaas bilayer quantum wells
文献类型：期刊论文
| 作者 | Niu, ZC; Xu, XH; Ni, HQ; Xu, YQ; He, ZH; Han, Q; Wu, RH |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-05-01 |
| 卷号 | 278期号:1-4页码:558-563 |
| 关键词 | Bilayer quantum well Photoluminescence Mbe Gaas1-x Sb-x/ln(y)ga(1-y)as |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.12.102 |
| 通讯作者 | Niu, zc(zcniu@red.semi.ac.cn) |
| 英文摘要 | Molecular beam epitaxy (mbe) growth of (inyga1-yas/gaas1-xsbx)/gaas bilayer quantum well (bqw) structures has been investigated. it is evidenced by photo luminescence (pl) that a strong blue shift of the pl peak energy of 47 mev with increasing pl excitation power from 0.63 to 20 mw was observed, indicating type ii band alignment of the bqw. the emission wavelength at room temperature from (inyga1-yas/gaas1-xsbx)/gaas bqw is longer (above 1.2 mu m) than that from ingaas/gaas and gaassb/gaas sqw structures (1.1 mu m range), while the emission efficiency from the bqw structures is comparable to that of the sqw. through optimizing growth conditions, we have obtained room temperature 1.31 mu m wavelength emission from the (inyga1-yas/gaas1-xsbx)/gaas bqw. our results have proved experimentally that the gaas-based bilayer (inyga1-yas/gaas1-xsbx)/gaas quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | CONTINUOUS-WAVE OPERATION ; LASERS ; WAVELENGTH ; GAASSB/INGAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000228916300104 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426412 |
| 专题 | 半导体研究所 |
| 通讯作者 | Niu, ZC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Niu, ZC,Xu, XH,Ni, HQ,et al. Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (inyga1-yas/gaas1-x sb-x)/ gaas bilayer quantum wells[J]. Journal of crystal growth,2005,278(1-4):558-563. |
| APA | Niu, ZC.,Xu, XH.,Ni, HQ.,Xu, YQ.,He, ZH.,...&Wu, RH.(2005).Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (inyga1-yas/gaas1-x sb-x)/ gaas bilayer quantum wells.Journal of crystal growth,278(1-4),558-563. |
| MLA | Niu, ZC,et al."Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (inyga1-yas/gaas1-x sb-x)/ gaas bilayer quantum wells".Journal of crystal growth 278.1-4(2005):558-563. |
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来源：半导体研究所
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