Luminescence properties of multi-layer ingan quantum dots grown on c- and r-plane sapphire substrates
文献类型：期刊论文
| 作者 | Chen, Z; Chua, SJ; Han, PD; Liu, XL; Lu, DC; Zhu, QS; Wang, ZG; Tripathy, S |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2005-04-01 |
| 卷号 | 27期号:3页码:314-318 |
| 关键词 | Gan Ingan Quantum dots Photoluminescence |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2004.12.010 |
| 通讯作者 | Tripathy, s() |
| 英文摘要 | In this study, we report comparative luminescence properties of multi-layer ingan quantum dots grown on c- and r-plane sapphire substrates by metal organic chemical vapor deposition (mocvd). high-density ingan quantum dots (qds) are formed on gan templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. atomic force microscopy (afm) has been employed to estimate the size and height of these dots. photoluminescence (pl) spectra recorded from (1120) ingan qds/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) ingan qds/(0001) sapphire. due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) ingan qds in the active layers would lead to high efficiency light emitting devices. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; TEMPERATURE ; SURFACES ; SEMICONDUCTORS ; EMISSION ; SHIFT |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000228409200002 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426417 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tripathy, S |
| 作者单位 | 1.Inst Mat Res & Engn, Singapore 117602, Singapore 2.Singapore MIT Alliance, Singapore 117576, Singapore 3.Inst Semicond, Lab Semicond Mat Sci, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Z,Chua, SJ,Han, PD,et al. Luminescence properties of multi-layer ingan quantum dots grown on c- and r-plane sapphire substrates[J]. Physica e-low-dimensional systems & nanostructures,2005,27(3):314-318. |
| APA | Chen, Z.,Chua, SJ.,Han, PD.,Liu, XL.,Lu, DC.,...&Tripathy, S.(2005).Luminescence properties of multi-layer ingan quantum dots grown on c- and r-plane sapphire substrates.Physica e-low-dimensional systems & nanostructures,27(3),314-318. |
| MLA | Chen, Z,et al."Luminescence properties of multi-layer ingan quantum dots grown on c- and r-plane sapphire substrates".Physica e-low-dimensional systems & nanostructures 27.3(2005):314-318. |
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来源：半导体研究所
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