Photoluminescence of low-dimensional semiconductor structures under pressure
文献类型：期刊论文
| 作者 | Li, GH; Chen, Y; Fang, ZL; Ma, BS; Su, FH; Ding, K |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2005-06-01 |
| 卷号 | 24期号:3页码:174-178 |
| 关键词 | Pressure Photoluminescence Quantum dot Nanoparticle |
| ISSN号 | 1001-9014 |
| 通讯作者 | Li, gh() |
| 英文摘要 | Photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. the measured pressure coefficients of in0.55al0.45 as/al0.5ga0.5as quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 mev/gpa, respectively. it indicates that these quantum dots are type-i dots. on the other hand, the measured pressure coefficient for quantum dots with 7 nm in size is -17mev/gpa, indicating the type-ii character. the measured pressure coefficient for mn emission in zns:mn nanoparticles is -34.6mev/gpa, in agreement with the predication of the crystal field theory. however, the da emission is nearly independent on pressure, indicating that this emission is related to the surface defects in zns host. the measured pressure coefficient of cu emission in zns: cu nanoparticles is 63.2 mev/gpa. it implies that the acceptor level introduced by cu ions has some character of shallow level. the measured pressure coefficient of eu emission in zns:eu nanoparticles is 24.1 mev/gpa, in contrast to the predication of the crystal field theory. it may be due to the strong interaction between the excited state of eu ions and the conduction band of zns host. |
| WOS关键词 | HYDROSTATIC-PRESSURE ; NANOPARTICLES ; TEMPERATURE ; BEHAVIOR |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000230296400003 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426419 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, GH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, GH,Chen, Y,Fang, ZL,et al. Photoluminescence of low-dimensional semiconductor structures under pressure[J]. Journal of infrared and millimeter waves,2005,24(3):174-178. |
| APA | Li, GH,Chen, Y,Fang, ZL,Ma, BS,Su, FH,&Ding, K.(2005).Photoluminescence of low-dimensional semiconductor structures under pressure.Journal of infrared and millimeter waves,24(3),174-178. |
| MLA | Li, GH,et al."Photoluminescence of low-dimensional semiconductor structures under pressure".Journal of infrared and millimeter waves 24.3(2005):174-178. |
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来源：半导体研究所
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