The effect of in content on high-density inxga1-xas quantum dots
文献类型：期刊论文
| 作者 | Yu, LK; Xu, B; Wang, ZG; Jin, P; Zhao, C; Lei, W; Sun, J; Li, K; Hu, LJ; Liang, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-08-15 |
| 卷号 | 282期号:1-2页码:173-178 |
| 关键词 | High density Photoluminescence Uniformity Molecular beam epitaxy Quantum dots In component |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.05.010 |
| 通讯作者 | Yu, lk(yulike@red.semi.ac.cn) |
| 英文摘要 | We have successfully grown self-assembled inxga1-xas (x = 0.44, 0.47, 0.50) quantum dots (qds) with high density (> 10(11)/cm(2)) by mbe. the effect of in content on the high-density qd is investigated by atomic force microscopy (afm) and photoluminescence (pl) spectra. it is found that sample with in-mole-fraction of 0.5 shows small size fluctuation and high pl intensity. the influence of growth temperature on high-density qd is also investigated in our experiment. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; MU-M ; LASERS ; LAYER ; GAAS(100) ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000231200900024 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426422 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yu, LK |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yu, LK,Xu, B,Wang, ZG,et al. The effect of in content on high-density inxga1-xas quantum dots[J]. Journal of crystal growth,2005,282(1-2):173-178. |
| APA | Yu, LK.,Xu, B.,Wang, ZG.,Jin, P.,Zhao, C.,...&Liang, LY.(2005).The effect of in content on high-density inxga1-xas quantum dots.Journal of crystal growth,282(1-2),173-178. |
| MLA | Yu, LK,et al."The effect of in content on high-density inxga1-xas quantum dots".Journal of crystal growth 282.1-2(2005):173-178. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。