Formation of gan film by ammoniating ga2o3/al2o3 deposited on si(111) substrate
文献类型：期刊论文
| 作者 | Wei, QQ; Xue, CS; Sun, ZC; Cao, WT; Zhuang, HH |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2005-02-01 |
| 卷号 | 34期号:2页码:312-315 |
| 关键词 | Gan Ga2o3/al2o3 film Ammoniating Magnetron sputtering |
| ISSN号 | 1002-185X |
| 通讯作者 | Wei, qq() |
| 英文摘要 | Gallium nitride (gan) films have been successfully fabricated on silicon (111) substrates through ammoniating ga2o3/al2o3 films deposited by rf magnetron sputtering. the formed films were characterized by fourier transform infrared (ftir) transmission spectroscopy, x-ray diffraction (xrd), x-ray photoelectron spectroscopy (xps), scanning electron microscopy (sem) and photo luminescence spectrum(pl). the results indicate that the films formed are polycrystalline gan with hexagonal wurtzite structure. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; EPITAXIAL-GROWTH ; PHASE EPITAXY ; BEAM EPITAXY ; BUFFER ; LAYERS |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000227367700035 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426438 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, QQ |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, QQ,Xue, CS,Sun, ZC,et al. Formation of gan film by ammoniating ga2o3/al2o3 deposited on si(111) substrate[J]. Rare metal materials and engineering,2005,34(2):312-315. |
| APA | Wei, QQ,Xue, CS,Sun, ZC,Cao, WT,&Zhuang, HH.(2005).Formation of gan film by ammoniating ga2o3/al2o3 deposited on si(111) substrate.Rare metal materials and engineering,34(2),312-315. |
| MLA | Wei, QQ,et al."Formation of gan film by ammoniating ga2o3/al2o3 deposited on si(111) substrate".Rare metal materials and engineering 34.2(2005):312-315. |
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来源：半导体研究所
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