Research progress of electronic properties of self-assembled semiconductor quantum dots
文献类型：期刊论文
| 作者 | Sun, J; Jin, P; Wang, ZG |
| 刊名 | Acta metallurgica sinica
 |
| 出版日期 | 2005-05-01 |
| 卷号 | 41期号:5页码:463-470 |
| 关键词 | Self-assembled semiconductor quantum dot Quantum size effect Nanoelectronic device |
| ISSN号 | 0412-1961 |
| 通讯作者 | Sun, j(albertjefferson@sohu.com) |
| 英文摘要 | Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-coulumb-blockade effect and nonlinear optical effect. due to its advantages of less crystal defects and relatively simpler fabrication technology, this material may be of important value in the research of future nanoelectronic device. in the order of vertical transport, lateral transport and charge storage, recent advances in the electronic properties of this material are brefly introduced, and the problems and perspectives are analyzed. |
| WOS关键词 | RESONANT-TUNNELING DIODES ; ROOM-TEMPERATURE ; ARTIFICIAL ATOMS ; CHARGE STORAGE ; TRANSISTOR ; FABRICATION ; WELL ; HYSTERESIS ; TRANSPORT ; DEVICES |
| WOS研究方向 | Metallurgy & Metallurgical Engineering |
| WOS类目 | Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000229648900003 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426446 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, J |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, J,Jin, P,Wang, ZG. Research progress of electronic properties of self-assembled semiconductor quantum dots[J]. Acta metallurgica sinica,2005,41(5):463-470. |
| APA | Sun, J,Jin, P,&Wang, ZG.(2005).Research progress of electronic properties of self-assembled semiconductor quantum dots.Acta metallurgica sinica,41(5),463-470. |
| MLA | Sun, J,et al."Research progress of electronic properties of self-assembled semiconductor quantum dots".Acta metallurgica sinica 41.5(2005):463-470. |
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来源：半导体研究所
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