中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of thermal distribution of ga in sio2/si structure

文献类型:期刊论文

作者Pei, SH; Sun, HB; Xiu, XW; Zhang, XH; Jiang, YQ
刊名Rare metal materials and engineering
出版日期2005-02-01
卷号34期号:2页码:275-278
关键词Ga Sio2/si structure Concentration distribution
ISSN号1002-185X
通讯作者Pei, sh()
英文摘要The high temperature reaction between h-2 and ga2o3 is employed to obtain constant surface source of ga, then high uniformity doping of ga in si is realized through sio2-si compound structure. by characterizing means of sims, srp and four-point probe meter, the thermal distribution of p-type dopant ga in sio2 films, at the internal surface of sio2-si and near si surface is analyzed respectively. the essence of open-tube ga diffusion is revealed, which is closely related with both the rapid transportation of ga through sio2 film and the segregation effect of it at the internal surface of sio2-si. the mechanism of ga concentration distribution is discussed accordingly.
WOS关键词ION-BEAM IMPLANTATION
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000227367700025
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
URI标识http://www.irgrid.ac.cn/handle/1471x/2426447
专题半导体研究所
通讯作者Pei, SH
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Pei, SH,Sun, HB,Xiu, XW,et al. Investigation of thermal distribution of ga in sio2/si structure[J]. Rare metal materials and engineering,2005,34(2):275-278.
APA Pei, SH,Sun, HB,Xiu, XW,Zhang, XH,&Jiang, YQ.(2005).Investigation of thermal distribution of ga in sio2/si structure.Rare metal materials and engineering,34(2),275-278.
MLA Pei, SH,et al."Investigation of thermal distribution of ga in sio2/si structure".Rare metal materials and engineering 34.2(2005):275-278.

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来源:半导体研究所

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