Investigation of thermal distribution of ga in sio2/si structure
文献类型:期刊论文
作者 | Pei, SH; Sun, HB; Xiu, XW; Zhang, XH; Jiang, YQ |
刊名 | Rare metal materials and engineering
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出版日期 | 2005-02-01 |
卷号 | 34期号:2页码:275-278 |
关键词 | Ga Sio2/si structure Concentration distribution |
ISSN号 | 1002-185X |
通讯作者 | Pei, sh() |
英文摘要 | The high temperature reaction between h-2 and ga2o3 is employed to obtain constant surface source of ga, then high uniformity doping of ga in si is realized through sio2-si compound structure. by characterizing means of sims, srp and four-point probe meter, the thermal distribution of p-type dopant ga in sio2 films, at the internal surface of sio2-si and near si surface is analyzed respectively. the essence of open-tube ga diffusion is revealed, which is closely related with both the rapid transportation of ga through sio2 film and the segregation effect of it at the internal surface of sio2-si. the mechanism of ga concentration distribution is discussed accordingly. |
WOS关键词 | ION-BEAM IMPLANTATION |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
WOS记录号 | WOS:000227367700025 |
出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426447 |
专题 | 半导体研究所 |
通讯作者 | Pei, SH |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Pei, SH,Sun, HB,Xiu, XW,et al. Investigation of thermal distribution of ga in sio2/si structure[J]. Rare metal materials and engineering,2005,34(2):275-278. |
APA | Pei, SH,Sun, HB,Xiu, XW,Zhang, XH,&Jiang, YQ.(2005).Investigation of thermal distribution of ga in sio2/si structure.Rare metal materials and engineering,34(2),275-278. |
MLA | Pei, SH,et al."Investigation of thermal distribution of ga in sio2/si structure".Rare metal materials and engineering 34.2(2005):275-278. |
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来源:半导体研究所
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