Gal(1-x)mn(1-x)sb grown on gasb with mass-analyzed low-energy dual ion beam deposition
文献类型：期刊论文
| 作者 | Chen, CL; Chen, NF; Liu, LF; Wu, JL; Liu, ZK; Yang, SY; Chai, CL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-06-01 |
| 卷号 | 279期号:3-4页码:272-275 |
| 关键词 | X-ray diffraction Ion beam epitaxy Semiconducting ternary compounds |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.02.038 |
| 通讯作者 | Chen, cl(clchen@red.semi.ac.cn) |
| 英文摘要 | The ga1-xmnxsb samples were fabricated by the implantation of mn ions into gasb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. auger electron spectroscopy depth profile of the ga1-xmnxsb samples showed that the mn ions were successfully implanted into gasb substrate. clear double-crystal x-ray diffraction patterns of the ga1-xmnxsb samples indicate that the ga1-xmnxsb epilayers have the zinc-blende structure without detectable second phase. magnetic hysteresis-loop of the ga1-xmnxsb epilayers were obtained at room temperature (293 k) with alternating gradient magnetometry. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | III-V SEMICONDUCTORS ; MAGNETOTRANSPORT PROPERTIES ; EPITAXY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000229686200005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426449 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, CL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, CL,Chen, NF,Liu, LF,et al. Gal(1-x)mn(1-x)sb grown on gasb with mass-analyzed low-energy dual ion beam deposition[J]. Journal of crystal growth,2005,279(3-4):272-275. |
| APA | Chen, CL.,Chen, NF.,Liu, LF.,Wu, JL.,Liu, ZK.,...&Chai, CL.(2005).Gal(1-x)mn(1-x)sb grown on gasb with mass-analyzed low-energy dual ion beam deposition.Journal of crystal growth,279(3-4),272-275. |
| MLA | Chen, CL,et al."Gal(1-x)mn(1-x)sb grown on gasb with mass-analyzed low-energy dual ion beam deposition".Journal of crystal growth 279.3-4(2005):272-275. |
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来源：半导体研究所
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