Low-threshold-current and high-out-power 660 nm laser diodes with a p-gaas current blocking layer for dvd-ram/r
文献类型：期刊论文
| 作者 | Zheng, K; Ma, XY; Lin, T; Wang, J; Liu, SP; Zhang, GZ |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2005-09-01 |
| 卷号 | 22期号:9页码:2269-2272 |
| ISSN号 | 0256-307X |
| 通讯作者 | Zheng, k(zhengkai@mail.semi.ac.cn) |
| 英文摘要 | We investigate a new structure of high-power 660-nm algainp laser diodes. in the structure, a p-gaas layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. stable fundamental mode operation was achieved at up to 80 mw without kinks, and the maximum output power was 184 mw at 22 degrees c. the threshold current was 40 ma. |
| WOS关键词 | QUANTUM-WELL ; ZN DIFFUSION ; OPERATION ; LEAKAGE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000231816800036 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426451 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng, K |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Device, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, K,Ma, XY,Lin, T,et al. Low-threshold-current and high-out-power 660 nm laser diodes with a p-gaas current blocking layer for dvd-ram/r[J]. Chinese physics letters,2005,22(9):2269-2272. |
| APA | Zheng, K,Ma, XY,Lin, T,Wang, J,Liu, SP,&Zhang, GZ.(2005).Low-threshold-current and high-out-power 660 nm laser diodes with a p-gaas current blocking layer for dvd-ram/r.Chinese physics letters,22(9),2269-2272. |
| MLA | Zheng, K,et al."Low-threshold-current and high-out-power 660 nm laser diodes with a p-gaas current blocking layer for dvd-ram/r".Chinese physics letters 22.9(2005):2269-2272. |
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来源：半导体研究所
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