中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate

文献类型:期刊论文

作者Wei, QQ; Xue, CS; Sun, ZC; Cao, WT; Zhuang, HZ; Dong, ZH
刊名Rare metal materials and engineering
出版日期2005
卷号34期号:1页码:166-168
关键词Gan films Photoluminescence Band-edge emission Radiant combination
ISSN号1002-185X
通讯作者Wei, qq(wqq0503@hotmail.com)
英文摘要Photoluminescence(pl) of gallium nitride (gan) films grown by ammoniating ga2o3/al2o3 films deposited on silicon (111) by rf magnetron sputtering has been studied. the mechanism and the influence of growth condition on the photoluminescence is also studied. there are two emission peaks: a strong one at 347 nm, and a weak one at 412 nm. increasing the ammoniating temperature and lengthening the ammoniating time, the intensities of both two peaks increase, but the in locations do not move. the peak at 347 nm is considered to be the blue-shift, which was caused by micro- size of gan grains, of the band-edge emission peak of gan. the emission peak at 412 nm is attributed to radiant combination from conduct band to the energy level of acceptor impurity.
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000226733700039
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
URI标识http://www.irgrid.ac.cn/handle/1471x/2426459
专题半导体研究所
通讯作者Wei, QQ
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Wei, QQ,Xue, CS,Sun, ZC,et al. Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate[J]. Rare metal materials and engineering,2005,34(1):166-168.
APA Wei, QQ,Xue, CS,Sun, ZC,Cao, WT,Zhuang, HZ,&Dong, ZH.(2005).Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate.Rare metal materials and engineering,34(1),166-168.
MLA Wei, QQ,et al."Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate".Rare metal materials and engineering 34.1(2005):166-168.

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来源:半导体研究所

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