Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate
文献类型：期刊论文
| 作者 | Wei, QQ; Xue, CS; Sun, ZC; Cao, WT; Zhuang, HZ; Dong, ZH |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2005 |
| 卷号 | 34期号:1页码:166-168 |
| 关键词 | Gan films Photoluminescence Band-edge emission Radiant combination |
| ISSN号 | 1002-185X |
| 通讯作者 | Wei, qq(wqq0503@hotmail.com) |
| 英文摘要 | Photoluminescence(pl) of gallium nitride (gan) films grown by ammoniating ga2o3/al2o3 films deposited on silicon (111) by rf magnetron sputtering has been studied. the mechanism and the influence of growth condition on the photoluminescence is also studied. there are two emission peaks: a strong one at 347 nm, and a weak one at 412 nm. increasing the ammoniating temperature and lengthening the ammoniating time, the intensities of both two peaks increase, but the in locations do not move. the peak at 347 nm is considered to be the blue-shift, which was caused by micro- size of gan grains, of the band-edge emission peak of gan. the emission peak at 412 nm is attributed to radiant combination from conduct band to the energy level of acceptor impurity. |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000226733700039 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426459 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, QQ |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, QQ,Xue, CS,Sun, ZC,et al. Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate[J]. Rare metal materials and engineering,2005,34(1):166-168. |
| APA | Wei, QQ,Xue, CS,Sun, ZC,Cao, WT,Zhuang, HZ,&Dong, ZH.(2005).Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate.Rare metal materials and engineering,34(1),166-168. |
| MLA | Wei, QQ,et al."Photoluminescence study of gan film grown by ammoniating ga2o3/al2o3 deposited on si(111) substrate".Rare metal materials and engineering 34.1(2005):166-168. |
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来源：半导体研究所
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