Low threshold current density 1.5 mu m strained-mqw laser by n-type modulation-doping
文献类型：期刊论文
| 作者 | Zhang, RY; Wang, W; Zhou, F; Bian, J; Zhao, LJ; Zhu, HL; Jian, SS |
| 刊名 | Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5
 |
| 出版日期 | 2005 |
| 卷号 | 475-479页码:1663-1667 |
| 关键词 | 1.5 mu m ingaasp/ingaasp N-type modulation-doping mqw Low threshold current density |
| ISSN号 | 0255-5476 |
| 通讯作者 | Zhang, ry(ryzhang@red.semi.ac.cn) |
| 英文摘要 | 1.5 mu m. n-type modulation-doping ingaasp/ingaasp strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. n-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. the lowest threshold current density we obtained was 1052.5 a/cm(2) for 1000 mu m long lasers with seven quantum wells. the estimated threshold current density for an infinite cavity length was 94.72a/cm(2)/well, reduced by 23.3% compared with undoped barrier lasers. the n-type modulation doping effects on the lasing characteristics in 1.5 mu m devices have been demonstrated. |
| WOS关键词 | QUANTUM-WELL LASERS |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000227494702002 |
| 出版者 | TRANS TECH PUBLICATIONS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426462 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, RY |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 2.Northern Jiaotong Univ, Beijing 100044, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, RY,Wang, W,Zhou, F,et al. Low threshold current density 1.5 mu m strained-mqw laser by n-type modulation-doping[J]. Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,2005,475-479:1663-1667. |
| APA | Zhang, RY.,Wang, W.,Zhou, F.,Bian, J.,Zhao, LJ.,...&Jian, SS.(2005).Low threshold current density 1.5 mu m strained-mqw laser by n-type modulation-doping.Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,475-479,1663-1667. |
| MLA | Zhang, RY,et al."Low threshold current density 1.5 mu m strained-mqw laser by n-type modulation-doping".Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5 475-479(2005):1663-1667. |
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来源：半导体研究所
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