In situ doping control for growth of n-p-n si/sige/si heterojunction bipolar transistor by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao, F; Huang, DD; Li, JP; Liu, C |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2005-01-03 |
| 卷号 | 273期号:3-4页码:381-385 |
| 关键词 | Doping Molecular beam epitaxy Germanium silicon alloys Semiconducting germanium Semiconducting silicon Bipolar transistors |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.09.057 |
| 通讯作者 | Gao, f(feigao@snnu.edu.cn) |
| 英文摘要 | N-p-n si/sige/si heterostructures have been grown by a disilane (si2h6) gas and ge solid sources molecular beam epitaxy system using phosphine (ph3) and diborane (b2h6) as n- and p-type in situ doping sources, respectively. adopting an in situ doping control technology, the influence of background b dopant on the growth of n-si emitter layer was reduced, and an abrupt b dopant distribution from sige base to si emitter layer was obtained. besides, higher n-type doping in the surface region of emitter to reduce the emitter resist can be realized, and it did not result in the drop of growth rate of si emitter layer in this technology. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; SI1-XGEX ; SI2H6 ; FILMS ; MBE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000226243100008 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426476 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | 1.Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Huang, DD,Li, JP,et al. In situ doping control for growth of n-p-n si/sige/si heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. Journal of crystal growth,2005,273(3-4):381-385. |
| APA | Gao, F,Huang, DD,Li, JP,&Liu, C.(2005).In situ doping control for growth of n-p-n si/sige/si heterojunction bipolar transistor by gas source molecular beam epitaxy.Journal of crystal growth,273(3-4),381-385. |
| MLA | Gao, F,et al."In situ doping control for growth of n-p-n si/sige/si heterojunction bipolar transistor by gas source molecular beam epitaxy".Journal of crystal growth 273.3-4(2005):381-385. |
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来源：半导体研究所
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