Comparison of the properties of gan grown on complex si-based structures
文献类型：期刊论文
| 作者 | Zhou, SQ; Vantomme, A; Zhang, BS; Yang, H; Wu, MF |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2005-02-21 |
| 卷号 | 86期号:8页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1868870 |
| 通讯作者 | Vantomme, a() |
| 英文摘要 | With the aim of investigating the possible integration of optoelectronic devices, epitaxial gan layers have been grown on si(ill) semiconductor-on-insulator (soi) and on si/cosi2/si(111) using metalorganic chemical vapor deposition. the samples are found to possess a highly oriented wurtzite structure, a uniform thickness, and abrupt interfaces. the epitaxial orientation is determined as gan(0001)//si(111), gan[1120]//si[110], and gan[1010]//si[112], and the gan layer is tensilely strained in the direction parallel to the interface. according to rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of gan on si(111) soi is better than that of gan on silicide. room-temperature photoluminescence of gan/soi reveals a strong near-band-edge emission at 368 nm (3.37 ev) with a full width at half-maximum of 59 mev. (c) 2005 american institute of physics. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; QUALITY GAN ; LAYER |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000227609000026 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426479 |
| 专题 | 半导体研究所 |
| 通讯作者 | Vantomme, A |
| 作者单位 | 1.Katholieke Univ Leuven, Inst Voor Kern Stralingsfys, B-3001 Heverlee, Belgium 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Peking Univ, Sch Phys, Dept Tech Phys, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, SQ,Vantomme, A,Zhang, BS,et al. Comparison of the properties of gan grown on complex si-based structures[J]. Applied physics letters,2005,86(8):3. |
| APA | Zhou, SQ,Vantomme, A,Zhang, BS,Yang, H,&Wu, MF.(2005).Comparison of the properties of gan grown on complex si-based structures.Applied physics letters,86(8),3. |
| MLA | Zhou, SQ,et al."Comparison of the properties of gan grown on complex si-based structures".Applied physics letters 86.8(2005):3. |
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来源：半导体研究所
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