中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermal decomposition behaviour of zn3n2 powder

文献类型:期刊论文

作者Zong, FJ; Ma, HL; Liang, W; Du, W; Zhang, XJ; Xiao, HD; Ma, J; Ji, F; Xue, CS; Zhuang, HZ
刊名Chinese physics letters
出版日期2005-04-01
卷号22期号:4页码:907-910
ISSN号0256-307X
通讯作者Zong, fj(fjzong@sdu.edu.cn)
英文摘要Thermal gravimetric analysis (tga) and differential thermal analysis (dta) are employed to investigate the thermal decomposition behaviour of zinc nitride powder, which indicated that the thermal oxidation of zinc nitride powder in air follows the two-step reaction model. when the temperature is between 200 and 500 degrees c, compact zno or zn-x oynz layers in the surface of zinc nitride powder will begin to form, and prevent the interior of zinc nitride powder from the thermal oxidation. when the temperature is higher than 500 degrees c, fast thermal oxidation occurs in the interior of zinc nitride powder. over 750 degrees c, all the zinc nitride will turn into zinc oxide. the x-ray diffraction (xrd) and fourier transform infrared spectroscopy (ftir) of the zinc nitride powder annealed at different temperature in air are consistent with the two-step reaction model.
WOS关键词THIN-FILMS ; OPTICAL-PROPERTIES ; ZINC-OXIDE ; OXIDATION ; CO
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000228350900036
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426485
专题半导体研究所
通讯作者Zong, FJ
作者单位1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
2.Jinan Univ, Inst Optoelect Mat & Technol, Jinan 250003, Peoples R China
3.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Zong, FJ,Ma, HL,Liang, W,et al. Thermal decomposition behaviour of zn3n2 powder[J]. Chinese physics letters,2005,22(4):907-910.
APA Zong, FJ.,Ma, HL.,Liang, W.,Du, W.,Zhang, XJ.,...&Zhuang, HZ.(2005).Thermal decomposition behaviour of zn3n2 powder.Chinese physics letters,22(4),907-910.
MLA Zong, FJ,et al."Thermal decomposition behaviour of zn3n2 powder".Chinese physics letters 22.4(2005):907-910.

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来源:半导体研究所

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