Passive q-switching modelocked yb3+-doped fibre laser with gaas absorber grown at low temperature
文献类型：期刊论文
| 作者 | Feng, XM; Wang, YG; Liu, YY; Lan, YS; Lin, T; Wang, J; Wang, XW; Fang, GZ; Ma, XY; Wang, YG |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2005-02-01 |
| 卷号 | 22期号:2页码:391-393 |
| ISSN号 | 0256-307X |
| 通讯作者 | Feng, xm() |
| 英文摘要 | Gaas absorber was grown at low temperature (550degreesc) by metal organic chemical vapour deposition (mocvd) and was used as an output coupler with which we realized q-switching modelocked yb3+-doped fibre laser. the shortest period of the envelope of the q-switched modelocking is about 3mus. the modelocking threshold is 4.27w and the highest average output pulse power is 290 mw. the modelocking frequency is 12 mhz. |
| WOS关键词 | ND-YAG LASER ; SATURABLE ABSORBER ; MIRROR |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000226685800034 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426493 |
| 专题 | 半导体研究所 |
| 通讯作者 | Feng, XM |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Tianjin Univ, Ultrafast Laser Lab, Sch Precis Instrument & Optoelect Engn, Tianjin 300072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, XM,Wang, YG,Liu, YY,et al. Passive q-switching modelocked yb3+-doped fibre laser with gaas absorber grown at low temperature[J]. Chinese physics letters,2005,22(2):391-393. |
| APA | Feng, XM.,Wang, YG.,Liu, YY.,Lan, YS.,Lin, T.,...&Zhang, ZG.(2005).Passive q-switching modelocked yb3+-doped fibre laser with gaas absorber grown at low temperature.Chinese physics letters,22(2),391-393. |
| MLA | Feng, XM,et al."Passive q-switching modelocked yb3+-doped fibre laser with gaas absorber grown at low temperature".Chinese physics letters 22.2(2005):391-393. |
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来源：半导体研究所
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