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Chinese Academy of Sciences Institutional Repositories Grid
Synthesis and structural properties of gan particles from gao2h powders

文献类型:期刊论文

作者Xiao, HD; Ma, HL; Xue, CS; Hu, WR; Ma, J; Zong, FJ; Zhang, XJ; Ji, F
刊名Diamond and related materials
出版日期2005-10-01
卷号14期号:10页码:1730-1734
关键词Gao2h Beta-ga2o3 Synthesis Nitridation temperature Gan
ISSN号0925-9635
DOI10.1016/j.diamond.2005.06.024
通讯作者Ma, hl(hlma@sdu.edu.cn)
英文摘要Gallium nitride(gan) powders have been synthesized by nitriding gallium oxyhydroxide (gao2h) powders in the flow of nh3 gas at a nitridation temperature of 950 degrees c for 35 min. x-ray powder diffraction (xrd) patterns and fourier transform infrared (ftir) spectra reveal that simple heat treatment of gao2h in the flow of nh3 leads to the formation of hexagonl gan with lattice constants a =3.191 angstrom, and c =5.192 angstrom at 950 degrees c through intermediate conversion of beta-ga2o3. x-ray photo-electron spectroscopy (xps) confirms the formation of bonding between ga and n, and yields that the surface stoichiometry of ga: n approximates 1: 1, transmission electron microscopy (tem) image indicates that gan particle is a single crystal, and its morphology is ruleless. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词GALLIUM NITRIDE ; OXIDE ; NANOWIRES ; EPITAXY ; GROWTH
WOS研究方向Materials Science
WOS类目Materials Science, Multidisciplinary
语种英语
WOS记录号WOS:000232071200024
出版者ELSEVIER SCIENCE SA
URI标识http://www.irgrid.ac.cn/handle/1471x/2426502
专题半导体研究所
通讯作者Ma, HL
作者单位1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Xiao, HD,Ma, HL,Xue, CS,et al. Synthesis and structural properties of gan particles from gao2h powders[J]. Diamond and related materials,2005,14(10):1730-1734.
APA Xiao, HD.,Ma, HL.,Xue, CS.,Hu, WR.,Ma, J.,...&Ji, F.(2005).Synthesis and structural properties of gan particles from gao2h powders.Diamond and related materials,14(10),1730-1734.
MLA Xiao, HD,et al."Synthesis and structural properties of gan particles from gao2h powders".Diamond and related materials 14.10(2005):1730-1734.

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来源:半导体研究所

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