Theoretical investigation of intersubband transition in alxga1-xn/gan/alyga1-yn step quantum well
文献类型：期刊论文
| 作者 | Li, JM; Lu, YW; Han, XX; Wu, JJ; Liu, XL; Zhu, QS; Wang, ZG |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2005-09-01 |
| 卷号 | 28期号:4页码:453-461 |
| 关键词 | Quantum wells Semiconductors Intersubband transitions |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2005.05.057 |
| 通讯作者 | Li, jm(jiemli@red.semi.ac.cn) |
| 英文摘要 | A modified self-consistent method is introduced for the design of alxga1-xn/gan step quantum well (sqw) with the position and energy-dependent effective mass. the effects of nonparabolicity are included. it is shown that the nonparabolicity effect is minute for the lowest subband energy level and grows in size for the higher subband states. the effects of nonparabolicity have significant influence on the transition energies and the oscillator strengths and should be taken into account in the investigation of the optical transitions. the strong asymmetric property introduced by the step quantum well magnifies the weak intersubband transition from the ground state to the third state (1 -> 3). it is shown that in an appropriate scope, the intersubband transition (1 -> 3) has the comparable oscillator strength with transition from the ground state to the second one (1 -> 2), which suggests the possible application of the two-color photodetectors. the results of this work should provide useful guidance for the design of optically pumped asymmetric quantum well lasers and quantum well infrared photodetectors (qwips). (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | RAY PHOTOEMISSION SPECTROSCOPY ; PIEZOELECTRIC POLARIZATION ; MU-M ; NONPARABOLICITY ; ABSORPTION ; ALGAN/GAN ; GAN ; DEVICES ; DESIGN ; RANGE |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000232038500017 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426508 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, JM |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, JM,Lu, YW,Han, XX,et al. Theoretical investigation of intersubband transition in alxga1-xn/gan/alyga1-yn step quantum well[J]. Physica e-low-dimensional systems & nanostructures,2005,28(4):453-461. |
| APA | Li, JM.,Lu, YW.,Han, XX.,Wu, JJ.,Liu, XL.,...&Wang, ZG.(2005).Theoretical investigation of intersubband transition in alxga1-xn/gan/alyga1-yn step quantum well.Physica e-low-dimensional systems & nanostructures,28(4),453-461. |
| MLA | Li, JM,et al."Theoretical investigation of intersubband transition in alxga1-xn/gan/alyga1-yn step quantum well".Physica e-low-dimensional systems & nanostructures 28.4(2005):453-461. |
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来源：半导体研究所
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