Frequency dependence of junction capacitance of gan p-i-n uv detectors
文献类型：期刊论文
| 作者 | Kang, Y; Xu, YH; Zhao, DG; Fang, JX |
| 刊名 | Solid-state electronics
 |
| 出版日期 | 2005-07-01 |
| 卷号 | 49期号:7页码:1135-1139 |
| 关键词 | Capacitance-frequency characteristics Deep level Gan Uv detector |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.sse.2005.05.001 |
| 通讯作者 | Fang, jx() |
| 英文摘要 | In this paper frequency dependence of small-signal capacitance of p-i-n uv detectors, which were fabricated on gan grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. the schibli-milnes model was used to analyze the capacitance-frequency characteristics. according to high frequency c-v measurements, the deep level mean concentration is about 2.98 x 10(20) cm(-3). the deep level is caused by the un-ionised mg dopant. the calculated mg activation energy is 260 mev and the hole thermal capture cross section of the deep level is about 2.73 x 10(-22) cm(2). the applicability of the schibli-milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. it is concluded that the analytic expression of the schibli-milnes model can still be used to describe the capacitance-frequency characteristics of gan p-i-n uv detectors in good agreement with experiment. (c) 2005 elsevier ltd. all rights reserved. |
| WOS关键词 | DEEP IMPURITY ; ADMITTANCE ; MG |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000230709100012 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426509 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fang, JX |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Kang, Y,Xu, YH,Zhao, DG,et al. Frequency dependence of junction capacitance of gan p-i-n uv detectors[J]. Solid-state electronics,2005,49(7):1135-1139. |
| APA | Kang, Y,Xu, YH,Zhao, DG,&Fang, JX.(2005).Frequency dependence of junction capacitance of gan p-i-n uv detectors.Solid-state electronics,49(7),1135-1139. |
| MLA | Kang, Y,et al."Frequency dependence of junction capacitance of gan p-i-n uv detectors".Solid-state electronics 49.7(2005):1135-1139. |
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来源：半导体研究所
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