Space-charge-limited currents in gan schottky diodes
文献类型：期刊论文
| 作者 | Shen, XM; Zhao, DG; Liu, ZS; Hu, ZF; Yang, H; Liang, JW |
| 刊名 | Solid-state electronics
 |
| 出版日期 | 2005-05-01 |
| 卷号 | 49期号:5页码:847-852 |
| 关键词 | Gan Schottky diode I-v characteristics Space-charge-limited current |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.see.2005.02.003 |
| 通讯作者 | Shen, xm(xmshen@mail.tongji.edu.cn) |
| 英文摘要 | Unusual dark current voltage (i-v) characteristics were observed in gan schottky diodes. i-v characteristics of the gan schottky diodes were measured down to the magnitude of 10(-14) a. although these schottky diodes were clearly rectifying, their i-v characteristics were non-ideal which can be judged from the non-linearity in the semi-logarithmic plots. careful analysis of the forward bias i-v characteristics on log-log scale indicates space-charge-limited current (sclc) conduction dominates the current transport in these gan schottky diodes. the concentration of the deep trapping centers was estimated to be higher than 10(15) cm(-3). in the deep level transient spectra (dlts) measurements for the gan schottky diodes, deep defect levels around 0.20 ev below the bottom of the conduction band were identified, which may act as the trapping centers. the concentration of the deep centers obtained from the dlts data is about 5 x 10(15) cm(-3). sclc measurements may be used to probe the properties of deep levels in wide bandgap gan-algan compound semiconductors, as is the case with insulators in the presence of trapping centers. (c) 2005 elsevier ltd. all rights reserved. |
| WOS关键词 | N-TYPE GAN ; JUNCTION DIODES ; MECHANISM ; CARBIDE |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000228434200027 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426511 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shen, XM |
| 作者单位 | 1.Tongji Univ, Inst Semicond & Informat Technol, Shanghai 200092, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shen, XM,Zhao, DG,Liu, ZS,et al. Space-charge-limited currents in gan schottky diodes[J]. Solid-state electronics,2005,49(5):847-852. |
| APA | Shen, XM,Zhao, DG,Liu, ZS,Hu, ZF,Yang, H,&Liang, JW.(2005).Space-charge-limited currents in gan schottky diodes.Solid-state electronics,49(5),847-852. |
| MLA | Shen, XM,et al."Space-charge-limited currents in gan schottky diodes".Solid-state electronics 49.5(2005):847-852. |
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来源：半导体研究所
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