Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy
文献类型：期刊论文
| 作者 | Chen, YH; Ye, XL; Xu, B; Zeng, YP; Wang, ZG |
| 刊名 | Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5
 |
| 出版日期 | 2005 |
| 卷号 | 475-479页码:1777-1781 |
| 关键词 | Optical anisotropy Quantum wells Interface roughness Reflectance difference spectroscopy Segregation |
| ISSN号 | 0255-5476 |
| 通讯作者 | Chen, yh(yhchen@red.semi.ac.cn) |
| 英文摘要 | The in-plane optical anisotropy of three groups of gaas/algaas quantum well structures has been studied by reflectance-difference spectroscopy (rds). for gaas/al0.36ga0.64as single qw structures, it is found that the optical anisotropy increases quickly as the well width is decreased. for an al0.02ga0.98as/alas multiple qw with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. an increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. the detailed analysis shows that the observed anisotropy arises from the interface asymmetry of qws, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. more, when the 1 ml inas is inserted at one interface of gaas/algaas qw, the optical anisotropy of the qw can be increased by a factor of 8 due to the enhanced asymmetry of the qw. these results demonstrate clearly that the rds is a sensitive and powerful tool for the characterization of semiconductor interfaces. |
| WOS关键词 | SHORT-PERIOD SUPERLATTICES ; RAMAN-SCATTERING ; GROWTH ; ROUGHNESS ; SEGREGATION ; ALAS/GAAS ; GAAS ; ALAS |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000227494702027 |
| 出版者 | TRANS TECH PUBLICATIONS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426518 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, YH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, YH,Ye, XL,Xu, B,et al. Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy[J]. Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,2005,475-479:1777-1781. |
| APA | Chen, YH,Ye, XL,Xu, B,Zeng, YP,&Wang, ZG.(2005).Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy.Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5,475-479,1777-1781. |
| MLA | Chen, YH,et al."Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy".Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5 475-479(2005):1777-1781. |
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来源：半导体研究所
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