Optical properties and exciton localization in ganas/gaas
文献类型：期刊论文
| 作者 | Luo, XD; Xu, ZY; Tan, PH; Ge, WK |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2005-06-01 |
| 卷号 | 24期号:3页码:185-188 |
| 关键词 | Ganas Excitonic localization Optical properties |
| ISSN号 | 1001-9014 |
| 通讯作者 | Luo, xd() |
| 英文摘要 | Ganas/gaas single quantum wells (sqws) and dilute ganas bulk grown by molecular beam epitaxy(mbe) were studied by photoluminescence (pl), selectively-excited pl, and time-resolved pl. exciton localization and delocalization were investigated in detail. under short pulse laser excitation, the delocalization exciton emission was revealed in ganas/gaas sqws. it exhibits quite different optical properties from n-related localized states. in dilute ganas bulk, a transition of alloy band related recombination was observed by measuring the pl dependence on temperature and excitation intensity and time-resolved pl, as well. this alloy-related transition presents intrinsic optical properties. these results are very important for realizing the abnomal features of iii-v-n semiconductors. |
| WOS关键词 | GAAS1-XNX ; PHOTOLUMINESCENCE ; ALLOYS ; STATES ; GAASN |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000230296400006 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426527 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, XD |
| 作者单位 | 1.Nantong Univ, Sch Sci, Jiangsu Provincial Key Lab Asic Design, Nantong 226007, Peoples R China 2.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 3.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, XD,Xu, ZY,Tan, PH,et al. Optical properties and exciton localization in ganas/gaas[J]. Journal of infrared and millimeter waves,2005,24(3):185-188. |
| APA | Luo, XD,Xu, ZY,Tan, PH,&Ge, WK.(2005).Optical properties and exciton localization in ganas/gaas.Journal of infrared and millimeter waves,24(3),185-188. |
| MLA | Luo, XD,et al."Optical properties and exciton localization in ganas/gaas".Journal of infrared and millimeter waves 24.3(2005):185-188. |
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来源：半导体研究所
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