中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical properties and exciton localization in ganas/gaas

文献类型:期刊论文

作者Luo, XD; Xu, ZY; Tan, PH; Ge, WK
刊名Journal of infrared and millimeter waves
出版日期2005-06-01
卷号24期号:3页码:185-188
关键词Ganas Excitonic localization Optical properties
ISSN号1001-9014
通讯作者Luo, xd()
英文摘要Ganas/gaas single quantum wells (sqws) and dilute ganas bulk grown by molecular beam epitaxy(mbe) were studied by photoluminescence (pl), selectively-excited pl, and time-resolved pl. exciton localization and delocalization were investigated in detail. under short pulse laser excitation, the delocalization exciton emission was revealed in ganas/gaas sqws. it exhibits quite different optical properties from n-related localized states. in dilute ganas bulk, a transition of alloy band related recombination was observed by measuring the pl dependence on temperature and excitation intensity and time-resolved pl, as well. this alloy-related transition presents intrinsic optical properties. these results are very important for realizing the abnomal features of iii-v-n semiconductors.
WOS关键词GAAS1-XNX ; PHOTOLUMINESCENCE ; ALLOYS ; STATES ; GAASN
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000230296400006
出版者SCIENCE PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2426527
专题半导体研究所
通讯作者Luo, XD
作者单位1.Nantong Univ, Sch Sci, Jiangsu Provincial Key Lab Asic Design, Nantong 226007, Peoples R China
2.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
3.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
推荐引用方式
GB/T 7714
Luo, XD,Xu, ZY,Tan, PH,et al. Optical properties and exciton localization in ganas/gaas[J]. Journal of infrared and millimeter waves,2005,24(3):185-188.
APA Luo, XD,Xu, ZY,Tan, PH,&Ge, WK.(2005).Optical properties and exciton localization in ganas/gaas.Journal of infrared and millimeter waves,24(3),185-188.
MLA Luo, XD,et al."Optical properties and exciton localization in ganas/gaas".Journal of infrared and millimeter waves 24.3(2005):185-188.

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来源:半导体研究所

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