中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoluminescence of large-sized inas/gaas quantum dots under hydrostatic pressure

文献类型:期刊论文

作者Ma, BS; Wang, XD; Luo, JW; Su, FH; Fang, ZL; Ding, K; Niu, ZC; Li, GH
刊名Journal of infrared and millimeter waves
出版日期2005-06-01
卷号24期号:3页码:207-212
关键词Condensed matter physics Photoluminescence Pressure Inas Quantum dots
ISSN号1001-9014
通讯作者Ma, bs()
英文摘要The photoluminescence of self-assembled inas/gaas quantum dots, which are 7.3nm in height and 78nm in base size, was investigated at 15k under hydrostatic pressures up to 9gpa. the emissions from both the ground and the first excited states in large inas dots were observed. the pressure coefficients of the two emissions are 69 and 72 mev/gpa respectively, which are lower than those of small inas/gaas dots. the analysis based on a nonlinear elasticity theory reveals that the small pressure coefficients mainly result from the changes of the misfit strain and the elastic constants with pressure. the pressure experiments suggest that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states.
WOS关键词III-V ; DEPENDENCE ; LAYER
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000230296400011
出版者SCIENCE PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2426530
专题半导体研究所
通讯作者Ma, BS
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Ma, BS,Wang, XD,Luo, JW,et al. Photoluminescence of large-sized inas/gaas quantum dots under hydrostatic pressure[J]. Journal of infrared and millimeter waves,2005,24(3):207-212.
APA Ma, BS.,Wang, XD.,Luo, JW.,Su, FH.,Fang, ZL.,...&Li, GH.(2005).Photoluminescence of large-sized inas/gaas quantum dots under hydrostatic pressure.Journal of infrared and millimeter waves,24(3),207-212.
MLA Ma, BS,et al."Photoluminescence of large-sized inas/gaas quantum dots under hydrostatic pressure".Journal of infrared and millimeter waves 24.3(2005):207-212.

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来源:半导体研究所

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