Design and fabrication of compact nonblocking 4x4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching
文献类型：期刊论文
| 作者 | Liu, JW; Yu, JZ; Chen, SW; Li, ZY |
| 刊名 | Optical engineering
 |
| 出版日期 | 2005-07-01 |
| 卷号 | 44期号:7页码:3 |
| ISSN号 | 0091-3286 |
| 关键词 | Optical matrix switch Chemical etching Silicon-on-insulator Total internal reflection mirror |
| DOI | 10.1117/1.1978944 |
| 通讯作者 | Liu, jw(jwliu@red.semi.ac.cn) |
| 英文摘要 | A folding nonblocking 4 x 4 optical matrix switch in simplified-tree architecture was designed and fabricated on a silicon-on-insulator wafer. to compress chip size, switch elements (ses) were connected by total internal reflection mirrors instead of conventional s-bends. for obtaining smooth interfaces, potassium hydroxide (koh) anisotropic chemical etching of silicon was employed. the device has a compact size of 20 x 3.2 mm(2) and a fast response of 8 +/- 1 mu s. power consumption of 2 x 2 se and excess loss per mirror were 145 mw and -1.1 db, respectively. (c) 2005 society of photo-optical instrumentation engineers. |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| 出版者 | SPIE-INT SOCIETY OPTICAL ENGINEERING |
| WOS记录号 | WOS:000232591100004 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426531 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, JW |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JW,Yu, JZ,Chen, SW,et al. Design and fabrication of compact nonblocking 4x4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching[J]. Optical engineering,2005,44(7):3. |
| APA | Liu, JW,Yu, JZ,Chen, SW,&Li, ZY.(2005).Design and fabrication of compact nonblocking 4x4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching.Optical engineering,44(7),3. |
| MLA | Liu, JW,et al."Design and fabrication of compact nonblocking 4x4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching".Optical engineering 44.7(2005):3. |
入库方式： iSwitch采集
来源：半导体研究所
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