中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of zno films by radio frequency magnetron sputtering and annealing

文献类型:期刊论文

作者Gao, HY; Zhuang, HZ; Xue, CS; Wang, SY; Dong, ZH; He, JT
刊名Rare metals
出版日期2005-09-01
卷号24期号:3页码:267-271
关键词Zno films Radio frequency magnetron sputtering Annealing Ammonia ambience Buffer layers
ISSN号1001-0521
通讯作者Zhuang, hz()
英文摘要Zno thin films were deposited on si(111) substrates through a radio frequency (rf) magnetron sputtering system. then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. the structure and composition of the zno films were studied by x-ray diffraction (xrd) and x-ray photoelectron spectroscopy (xps). the morphology of the samples was studied by scanning electron microscopy (sem). measured results show that zno films with hexagonal wurtzite structure were grown on si(111) substrates when annealed in the two ambiences. the volatilization process of zno in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.
WOS关键词PULSED-LASER DEPOSITION ; ZINC-OXIDE FILMS ; THIN-FILMS ; OPTICAL-PROPERTIES ; SAPPHIRE ; GROWTH ; TEMPERATURE
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000232447600013
出版者NONFERROUS METALS SOCIETY CHINA
URI标识http://www.irgrid.ac.cn/handle/1471x/2426538
专题半导体研究所
通讯作者Zhuang, HZ
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Gao, HY,Zhuang, HZ,Xue, CS,et al. Fabrication of zno films by radio frequency magnetron sputtering and annealing[J]. Rare metals,2005,24(3):267-271.
APA Gao, HY,Zhuang, HZ,Xue, CS,Wang, SY,Dong, ZH,&He, JT.(2005).Fabrication of zno films by radio frequency magnetron sputtering and annealing.Rare metals,24(3),267-271.
MLA Gao, HY,et al."Fabrication of zno films by radio frequency magnetron sputtering and annealing".Rare metals 24.3(2005):267-271.

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来源:半导体研究所

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