Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure
文献类型：期刊论文
| 作者 | Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2005-08-01 |
| 卷号 | 28期号:3页码:230-236 |
| 关键词 | Two-dimensional electron gas Inter-subband transition Gate voltage |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2005.03.008 |
| 通讯作者 | Han, xx(xxhan@red.semi.ac.cn) |
| 英文摘要 | The subband structure and inter-subband transition as a function of gate voltage are determined by solving the schrodinger and poisson equations self-consistently in an alxga1-xn/gan heterostructure. different aluminum mole fraction and thickness of alxga1-xn barrier are considered. calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. when the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. as a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. this tendency is in good agreement with the available data in the literature. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | ELECTRON-MOBILITY TRANSISTORS ; FIELD-EFFECT TRANSISTORS ; ALGAN/GAN HETEROSTRUCTURES ; GAS ; POLARIZATION ; DEVICES |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000230627400005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426541 |
| 专题 | 半导体研究所 |
| 通讯作者 | Han, XX |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, XX,Li, JM,Wu, JJ,et al. Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure[J]. Physica e-low-dimensional systems & nanostructures,2005,28(3):230-236. |
| APA | Han, XX.,Li, JM.,Wu, JJ.,Cong, GW.,Liu, XL.,...&Wang, ZG.(2005).Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure.Physica e-low-dimensional systems & nanostructures,28(3),230-236. |
| MLA | Han, XX,et al."Theoretical analysis of gate voltage-controlled subband states in an alxga1-xn/gan heterostructure".Physica e-low-dimensional systems & nanostructures 28.3(2005):230-236. |
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来源：半导体研究所
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