Optical properties and g factors of gaas quantum rods
文献类型：期刊论文
| 作者 | Zhang, X. W.; Zhu, Y. H.; Xia, J. B. |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2006-07-01 |
| 卷号 | 33期号:2页码:376-380 |
| 关键词 | Quantum rods G factors |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2006.04.009 |
| 通讯作者 | Zhang, x. w.(zhxw99@semi.ac.cn) |
| 英文摘要 | The hamiltonian of the zinc-blende quantum rods in the framework of eight-band effective-mass approximation in the presence of external homogeneous magnetic field is given. the electronic structure, optical properties and electron g factors of gaas quantum rods are investigated. we found that the electron g factors are very sensitively dependent on the dimensions of the quantum rods. as some of the three dimensions increase, the electron g factors decrease. the more the dimensions increase, the more the electron g factors decrease. the dimensions perpendicular to the direction of the magnetic field affect the electron g factors more than the other dimension. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | WIRES ; CARRIERS ; ENERGY ; DOTS |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000239270300015 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426542 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. W. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.CCAST, World Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, X. W.,Zhu, Y. H.,Xia, J. B.. Optical properties and g factors of gaas quantum rods[J]. Physica e-low-dimensional systems & nanostructures,2006,33(2):376-380. |
| APA | Zhang, X. W.,Zhu, Y. H.,&Xia, J. B..(2006).Optical properties and g factors of gaas quantum rods.Physica e-low-dimensional systems & nanostructures,33(2),376-380. |
| MLA | Zhang, X. W.,et al."Optical properties and g factors of gaas quantum rods".Physica e-low-dimensional systems & nanostructures 33.2(2006):376-380. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。