High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure mocvd
文献类型：期刊论文
| 作者 | Zhao, Q; Pan, JQ; Zhang, J; Wang, W |
| 刊名 | Optical materials
 |
| 出版日期 | 2006-06-01 |
| 卷号 | 28期号:8-9页码:1037-1040 |
| 关键词 | Selective-area growth Ultra-low-pressure Metal-organic chemical vapor deposition Tapered mask Photoluminescence |
| ISSN号 | 0925-3467 |
| DOI | 10.1016/j.optmat.2005.06.016 |
| 通讯作者 | Zhao, q(qzhao@red.semi.ac.cn) |
| 英文摘要 | An ingaasp/ingaasp multiple quantum wells (mqws) selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition was investigated in this article. a 46 nm photoluminescence peak wavelength shift was obtained with a small mask width variation (15-30 mu m). high-quality crystal layers with a photoluminescence (pl) ftill-width-at-half-maximum (fwhm) of less than 30 mev were achieved. using novel tapered masks, the transition-effect of the tapered region was also studied. the energy detuning of the tapered region was observed to be saturated with the larger ratio of the mask width divided to the tapered region length. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | BANDGAP ENERGY CONTROL ; INTEGRATED DFB LASER ; EPITAXY |
| WOS研究方向 | Materials Science ; Optics |
| WOS类目 | Materials Science, Multidisciplinary ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000237871200025 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426555 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Q |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Ctr Optoelect Technol, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Q,Pan, JQ,Zhang, J,et al. High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure mocvd[J]. Optical materials,2006,28(8-9):1037-1040. |
| APA | Zhao, Q,Pan, JQ,Zhang, J,&Wang, W.(2006).High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure mocvd.Optical materials,28(8-9),1037-1040. |
| MLA | Zhao, Q,et al."High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure mocvd".Optical materials 28.8-9(2006):1037-1040. |
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来源：半导体研究所
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