Reduction of dislocations in gan epilayer grown on si (111) substrates using a gan intermedial layer
文献类型：期刊论文
| 作者 | Wang Jian-Feng; Zhang Bao-Shun; Zhang Ji-Cai; Zhu Jian-Jun; Wang Yu-Tian; Chen Jun; Liu Wei; Jiang De-Sheng; Yao Duan-Zheng; Yang Hui |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2006-09-01 |
| 卷号 | 23期号:9页码:2591-2594 |
| ISSN号 | 0256-307X |
| 通讯作者 | Wang jian-feng(wlino@semi.ac.cn) |
| 英文摘要 | Gan intermedial layers grown under different pressures are inserted between gan epilayers and aln/si(111) substrates. in situ optical reflectivity measurements show that a transition from the three-dimensional (3d) mode to the 2d one occurs during the gan epilayer growth when a higher growth pressure is used during the preceding gan intermedial layer growth, and an improvement of the crystalline quality of gan epilayer will be made. combining the in situ reflectivity and transmission electron microscopy (tem) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; HIGH-QUALITY GAN ; ALN BUFFER LAYER ; NUCLEATION LAYER ; PHASE EPITAXY ; EVOLUTION ; DENSITY ; SILICON ; STRESS ; SI |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000240250300067 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426557 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Jian-Feng |
| 作者单位 | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Jian-Feng,Zhang Bao-Shun,Zhang Ji-Cai,et al. Reduction of dislocations in gan epilayer grown on si (111) substrates using a gan intermedial layer[J]. Chinese physics letters,2006,23(9):2591-2594. |
| APA | Wang Jian-Feng.,Zhang Bao-Shun.,Zhang Ji-Cai.,Zhu Jian-Jun.,Wang Yu-Tian.,...&Yang Hui.(2006).Reduction of dislocations in gan epilayer grown on si (111) substrates using a gan intermedial layer.Chinese physics letters,23(9),2591-2594. |
| MLA | Wang Jian-Feng,et al."Reduction of dislocations in gan epilayer grown on si (111) substrates using a gan intermedial layer".Chinese physics letters 23.9(2006):2591-2594. |
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来源：半导体研究所
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