Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction
文献类型：期刊论文
| 作者 | Zhao, Hong-Quan; Yu, Li-Juan; Huang, Yong-Zhen; Wang, Yu-Tian |
| 刊名 | Materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2006-08-25 |
| 卷号 | 133期号:1-3页码:117-123 |
| 关键词 | Inp Si X-ray double crystalline diffraction Thermal strain Wafer bonding |
| ISSN号 | 0921-5107 |
| DOI | 10.1016/j.mseb.2006.06.009 |
| 通讯作者 | Zhao, hong-quan(zhggeneral@red.semi.ac.cn) |
| 英文摘要 | Wafer bonding between p-si and an n-inp-based ingaasp multiple quantum well (mqw) wafer was achieved by a direct wafer bonding method. in order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees c, pair two at 250 degrees c, pair three at 350 degrees c, and pair four at 450 degrees c, respectively. the macroscopical strains on the bonded epitaxial layer include two parts, namely the internal strain and the strain caused by the mismatching of the crystalline orientation between inp (100) and si (100). these strains were measured by the x-ray double crystalline diffraction, and theoretical calculations of the longitudinal and perpendicular thermal strains at different annealing temperatures were calculated using the bi-metal thermostats model, both the internal strain and the thermal strain increase with the annealing temperature. normal thermal stress and the elastic biaxial thermal strain energy were also calculated using this model. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | OPTOELECTRONIC DEVICES ; EPITAXIAL OVERGROWTHS ; TEMPERATURE ; INTERFACE ; STRESSES ; VCSELS ; SURFACES ; ENERGY |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000240633500021 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426558 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Hong-Quan |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Hong-Quan,Yu, Li-Juan,Huang, Yong-Zhen,et al. Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction[J]. Materials science and engineering b-solid state materials for advanced technology,2006,133(1-3):117-123. |
| APA | Zhao, Hong-Quan,Yu, Li-Juan,Huang, Yong-Zhen,&Wang, Yu-Tian.(2006).Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction.Materials science and engineering b-solid state materials for advanced technology,133(1-3),117-123. |
| MLA | Zhao, Hong-Quan,et al."Strain analysis of inp/ingaasp wafer bonded on si by x-ray double crystalline diffraction".Materials science and engineering b-solid state materials for advanced technology 133.1-3(2006):117-123. |
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来源：半导体研究所
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